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Transient Flat-Band Voltage Shifts Following High Voltage Stressing of Thin Oxides*

Published online by Cambridge University Press:  22 February 2011

D. P. Wong  and
D. J. Dumin
D. P. Wong
Affiliation:
CSDRR, ECE Dept., Clemson Univ., Clemson, SC 29634–0915
D. J. Dumin
Affiliation:
CSDRR, ECE Dept., Clemson Univ., Clemson, SC 29634–0915
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Abstract

It has been shown that the transient decay of the current after removal of a high voltage stressing pulse changed from an exponential RC time constant decay to a very long decay that had a 1/t time dependence[l]. During these long transients the flat-band voltages of the capacitors changed as the traps inside the oxides discharged. The discharge of both positive and negative changes near the silicon-oxide interface have been measured using QSCV measurements. In this paper the transient shifts in the flat-band voltages due to the discharging of stress generated traps in the oxide will be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 235
Copyright
Copyright © Materials Research Society 1993

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Footnotes

**

Support, in part, by a Texas Instrument Graduate Fellowship.

*

Supported by the Semiconductor Research Corporation.

References

REFERENCES

1. Maddux, J. R., MSEE Thesis, Clemson University, May 1991.Google Scholar
2. Liang, M.S., Yeow, Y.T., Chang, C., Hu, C., and Brodersen, R. W., IEDM Tech. Digest, 50, 1982.Google Scholar
3. Nissan-Cohen, Y., Shappir, J., and Frohman-Bentchkowsky, D., Appl. Phys. Lett. 44, 417, 1984.Google Scholar
4. Harai, E., Appl. Phys. Lett. 30, 601, 1977.Google Scholar
5. Dumin, D. J., Cooper, J. R., Dickerson, K. J., and Brown, G. A., Solid-State Electronics 35, 515, 1992.Google Scholar
6. Olivo, P., Ricco, B., and Sangiorgi, E., J. Appl. Phys., Vol. 54, No. 9, 1983.Google Scholar
7. Oldham, T. R., Lelis, A. J., and McLean, F. B., IEEE Trans, on Nucl. Sci. NS-33, 1203, 1986.Google Scholar