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Transient Mean-Field Reaction-Diffusion Model Applied to Hydrogen Evolution From Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

A. J. Franzi ,
M. Mavrikakis ,
J. W. Schwank  and
J. L. Gland
A. J. Franzi
Affiliation:
Depts. of Chem. Engineering, University of Michigan, Ann Arbor, MI 48105
M. Mavrikakis
Affiliation:
Depts. of Chem. Engineering, University of Michigan, Ann Arbor, MI 48105
J. W. Schwank
Affiliation:
Depts. of Chem. Engineering, University of Michigan, Ann Arbor, MI 48105
J. L. Gland
Affiliation:
Depts. of Chem. Engineering, University of Michigan, Ann Arbor, MI 48105 Chemistryl, University of Michigan, Ann Arbor, MI 48105
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Abstract

Hydrogen bulk mobility plays an important role in determining a wide range of materials and electronic properties of hydrogenated amorphous silicon (a-Si:H). The existence of two types of hydrogen traps plays an important role in controlling hydrogen mobility in, and evolution of hydrogen from a-Si:H, however, theoretical and experimental literature values for the trap energetics vary considerably. We have developed a mean-field reaction-diffusion model which explicitly includes two trap states and realistic surface processes to model hydrogen evolution from a-Si:H. Modern numerical techniques were required to solve this challenging problem over the wide range of temperatures and concentrations encountered in typical hydrogen evolution experiments. The model is based on a number of experimentally established parameters. Comparison of our rigorous model with temperature programmed hydrogen evolution experiments provides a powerful method for characterizing the energetics, trap concentrations and diffusivity of hydrogen in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 325
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Zellama, K., Germain, P., and Squelard, S., Physical Review B 23, 6648, (1981).Google Scholar
2. Jackson, W.B., Tsai, C.C., and Santos, P.V., Mat. Res. Symp. Proc. Vol 258, 319, (1992).Google Scholar
3. Kakalios, , James, , Semiconductors and Semimetals 34, 381, (1987).Google Scholar
4. Zafar, , Sufi, and Schiff, E.A., Mat. Res. Symp. Proc. Vol 258, 199, (1992).Google Scholar
5. Nakamura, , Minoru, and Misawa, Yutaka, J. Appl. Phys. 68 (3), 1005, (1990).Google Scholar
6. Jackson, W.B., Zhang, S.B., Tsai, C.C., and Donald, C., AlP Conf. Proceedings, 37, 1991.Google Scholar
7. Branz, H. M., Asher, S. E., and Nelson, B. P., AIP Conference Proceedings 268, 138, (1992).Google Scholar
8. Santos, , Paulo, V., and Jackson, Warren B., Physical Review B 46 (8), 4595, (1992).Google Scholar
9. Brzoska, K.D. and Kleint, C.H., Thin Solid Films 34, 131, (1979).Google Scholar
10. Beyer, W. and Wagner, H., J. Appl. Phys. 53 (12), 8745, (1982).Google Scholar
11. Jackson, W.B. and Tsai, C.C., Physical Review B 45 (12), 6564, (1992).Google Scholar