Skip to main content
×
Home
    • Aa
    • Aa

Transition Between Condensed Phases In Si And Ge

  • David Turnbull (a1)
Abstract
ABSTRACT

The thermodynamic interrelation between the amorphous semiconducting (a-sc), the diamond cubic (c-sc) and the liquid metal (lm) states of Ge and Si is reviewed with especial emphasis on the question of the thermodynamic uniqueness of the a-sc state following its structural relaxation. The experience on the occurrence of the direct lm→a-sc transition and its reverse is surveyed and interpreted. This experience, in conjunction with the lm undercooling studies of Devaud and the author, indicates that the formation, in the metastable regime, of a-sc from lm results from preferential growth rather than preferential nucleation.

Copyright
References
Hide All
1.Turnbull D., J. de Physique 43 C-1, 259 (1982).
2.Turnbull D., a) Mats. Res. Soc. Symp. Proc. 7, 103 (1983);
b) ibid, 13, 131 (1983).
3.Spaepen F. and Turnbull D., “Laser Annealing of Semiconductors,” (ed. Poate J.M. and Mayer J.W.), pp. 1542, Academic Press, NY (1982).
4.Donovan E.P., Spaepen F., Turnbull D., Poate J.M., and Jacobson D.C., J. Appl. Phys. 57, 1795 (1985).
5.Czepregi L., Kullen R.P., Mayer J.W. and Sigmon T.W., Sol. State Conmmun. 21, 1019 (1977).
6.Czepregi L., Kennedy E.F., Mayer J.W., and Sigmon TW., J. Appl. Phys. 49, 3906 (1978).
7.Olson G.L., Kokorowski S.A., Ross J.A., and Hess L.D., Mats. Res. Soc. Proc. 13, 141 (1983).
8.Lietoila A., Wakita A., Sigmon T.W., and Gibbons J.F., J. Appl. Phys. 53, 4399 (1982).
9.a) Gore G., Phil. Mag. 9, 73 (1855);
b) Takamori T.T., Messier R., and Roy R., J. Mat. Sci. 8, T809 (1973);
c) Auvert G., Bensahel D., Perio A., Nguyen V.T., Rozgoni G.A., Appl. Phys. Lett. 39, 724 (1981).
10.Gilmer G.H. and Leamy H.J., “Laser and Electron Beam Processing of Materials,” (eds. White C.W. and Peercy P.S.), pp. 227233, Academic Press, NY (1980).
11.Cullis A.G., Webber H.C., Chew N.G., Poate J.M., and Baeri P., Phys. Rev. Lett. 49, 219 (1982).
12.Thompson M.O., Galvin G.J., Mayer J.W., Peercy P.S., Poate J.M., Jacobson D.C., Cullis A.G., and Chew N.G., Phys. Rev. Lett. 52, 2360 (1984).
13.Thompson M.O., Bucksbaum P.H., and Bokor J., Mat. Res. Soc, Symp. Proc. 35, 181 (1985).
14.Bucksbaum P.H. and Bokor J., Phys. Rev. Lett. 53, 182 (1984).
15.Spaepen F. and Turnbull D., Am. Inst. Phys. Conf. Proc. 50, 50 (1979).
16.Bagley B.G. and Chen H.S., Am. Inst. Phys. Conf, Proc, 50, 97 (1979),
17.Paul W., Connell G.A.N., and Temkin R.J., Ady. Phys. 22, 529 (1973).
18.a) Etherington G., Wright A.C., Wenzel J.T., Dore J.C., and Clarke J.H., J. Non-Cryst. Solids 48, 265 (1982);
b) Wright A.C., J. Non-Cryst. Solids 75, 15 (1985).
19.Chen H.S. and Turnbull D., App J., Phys. 40, 4214 (1969).
20.Lytle F.W., Sayers D.E., and Eikum A.K., J. Non-Cryst. Solids 13, 68 (1973).
21.Temkin R.J. and Paul W., Proc. V-th Int. Conf. on Amorphous Semiconductors (ed. Stuke J. and Brenig W.), pp. 11931200, Taylor and Francis (1974).
22.Lannin J.S., Maley N., and Khirsagar S.T., Sol. State Comm. 53, 939 (1985).
23.Waddell C.N., Spitzer W.G., Frederickson J.E., Hubler G.K., and Kennedy T.A., J. Appl. Phys. 55, 4361 (1984).
24.Maley N., Lannin J.S., and Cullis A.G., Phys. Rev. Lett. 53, 1571 (1984).
25.Prokes S.M. and Spaepen F., Appl. Phys. Lett. 47, 234 (1985)
26.Wooten F. and Weaire D., Non-Cryst J., Solids 644, 325 (1984).
27.Turnbull D. and Cech R.E., J. Appl. Phys. 21, 804 (1950),
28.Powell G.L.F., Trans. Met. Soc. A.I.M.E. 239, 1662 (1967).
29.Devaud G. and Turnbull D., Mats. Res. Soc. Proc,, in press.
30.Devaud G. and Turnbull D., Appl, Phys. Lett. 46, 844 (1985).
31.Cullis A.G., Webber H.C. and Chew N.G., Appl, Phys. Letters 40, 998 (1982).
32.a) Liu P.L., Yen R., Bloembergen N., and Hodgson R.T., Appl. Phys. Lett. 34, 864 (1979);
b) Liu J.M., Yen R., Kurz H., and Bloembergen N., Appl. Phys. Lett. 39, 755 (1981).
33.Tsu R., Hodgson R.T., Tan T.Y., and Baglin J.E.E., Phys. Rev. Lett. 42, 1356 (1979).
34.Ohdomari I., Kakumu M., Sugahara H., Hori M., and Saito T., J. Appl. Phys. 52, 6617 (1981).
35.Jackson K.A., “Growth and Perfection of Crystals” (ed. Doremus R.H., Roberts B.W. and Turnbull D.), pp, 319325, Wiley, NY (1958).
36.Larson B.C., Tischler J.Z., and Mills D.M., “Nanosecond Resolution Time-Resolved X-Ray Study of Si During Pulsed-Laser Irradiation,” to be published.
37.Williams J.S., Elliian R.G., Brown W.L., and Seidel T.E., Phys. Rev, Lett. 55, 1482 (1985).
38.a) Vechten J.A. Van, “Lattice Defects in Semiconductors,” 212, Inst. of Phys., London (1975);
b) Vechten J.A. Van and Thurmond C.D., Phys, Rev. 14B, 3539 (1976).
39.Suni I., Goltz G., Grinaldi M.G., Nicolet M.A., and Lau S.S., Appl, Phys. Lett. 40, 269 (1982).
40.Mosley L., Germain P.J., Paessler M.A., and Zellema K., J. Non-Cryst. Solids 59–60, 273 (1983).
41.Mosley L.E. and Paessler M.A., Appl J., Phys. 57, 2328 (1985).
42.Simmons R.O. and Balluffi R.W., Phys. Rev. 117, 52, 62 1960; ibid. 119, 600 (1960).
43.Nygren E., Aziz M.J., Turnbull D., Poate J.M., Jacobson D.C., and Hull R., Appl. Phys. Lett. 47, 232 (1985).
44.Fratello V.J., Hays J.F., and Turnbull D., J. Appl. Phys. 51, 4718 (1980).
45.Fratello V.J., Hays J.F., Spaepen F., and Turnbull D., J. Appl. Phys. 51, 6160 (1980).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 2 *
Loading metrics...

Abstract views

Total abstract views: 24 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 22nd October 2017. This data will be updated every 24 hours.