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Trapping and Detrapping of H in Si: Impact on Diffusion Properties and Solar Cell Processing

Published online by Cambridge University Press:  01 February 2011

Bhushan Sopori ,
Y. Zhang ,
R. Reedy ,
K. Jones ,
N. M. Ravindra ,
S. Rangan  and
S. Ashok
Bhushan Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO
Y. Zhang
Affiliation:
National Renewable Energy Laboratory, Golden, CO
R. Reedy
Affiliation:
National Renewable Energy Laboratory, Golden, CO
K. Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ
S. Rangan
Affiliation:
Pennsylvania State University, University Park, PA
S. Ashok
Affiliation:
Pennsylvania State University, University Park, PA
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Abstract

Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps – stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best–fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F5.3
Copyright
Copyright © Materials Research Society 2002

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