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T-Site Trapped Molecular Hydrogen in Hot Wire a-Si:H

Published online by Cambridge University Press:  17 March 2011

J. Herberg ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg  and
R. E. Schropp
J. Herberg
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
D. J. Leopold
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
R. E. Norberg
Affiliation:
Department of Physics, Washington University, St. Louis, Mo 63130
R. E. Schropp
Affiliation:
Debye Institute, Utrecht University, P. O. Box 80000, NL-3508 TA Utrecht, The Netherlands
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Abstract

Proton NMR and proton-29Si double resonance NMR have been performed on hot wire a-Si:H films deposited from SiH4. Results are compared with those from conventional plasma enhanced chemical vapor deposition a-Si:H. Proton nutational angle studies and proton-29Si spin-echo double resonance (SEDOR) signals at 80 and 294 K indicate that a significant proton resonance population arises from T-site-trapped molecular H2. The hot wire films also display a ≥80 kHz FWHM uperbroad proton line and a sharp feature diamagnetically shifted by 25 ppm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A3.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCE

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