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TWO DEFECT-RELATED PHOTOLUMINESCENCE SPECTRA AND CROSS-SECTION TEM OF MBE GROWN CdTe ON (100) InSb

Published online by Cambridge University Press:  28 February 2011

Z.C. FENG ,
A. MASCARENHAS ,
W.J. CHOYKE ,
R.F.C. FARROW ,
J. GREGGI  and
F.A. SHIRLAND
Z.C. FENG
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
A. MASCARENHAS
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
W.J. CHOYKE
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260 Westinghouse R&D Center, Pittsburgh, PA 15235
R.F.C. FARROW
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
J. GREGGI
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
F.A. SHIRLAND
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
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Abstract

A series of MBE grown CdTe films were grown on (100) InSb substrates. The substrate temperature, Ts, was varied from 170° to 285°C in eleven steps. Low temperature (∿2K) photoluminescence measurements and TEM have been combined to show a strong correlation between defect density and the details of the luminescence spectra. A natural division is obtained for samples grown with substrate temperatures from 285°C to 250°C (Region I) and from 225°C to 170°C (Region II).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 97
Copyright
Copyright © Materials Research Society 1986

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