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Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

F. G. Johnson ,
G. W. Wicks ,
R. E. Viturro  and
R. Laforce
F. G. Johnson
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
G. W. Wicks
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
R. E. Viturro
Affiliation:
Xerox Webster Research Center 114–41D, Webster, NY 14580
R. Laforce
Affiliation:
Xerox Webster Research Center 114–41D, Webster, NY 14580
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Abstract

We report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needle valves, arsenide-phosphide heterostructures were successfully grown with virtually no group V intermixing between layers. For comparison, similar heterostructure samples were grown using only the mechanical shutters to switch between group V fluxes, and the resulting layers were severely intermixed. The amount of group V intermixing was shown to be independent of whether As2 or As4 fluxes were used to grow the layers. A GaAs/Ga0.5In0.5P multiple quantum well sample was also grown using the valved crackers. Photoluminescence peaks were clearly observed from 40 Å, 80 Å, and 300 Å GaAs quantum wells, but no luminescence was detected from a 20 Å well. An 80Å GaAs/ 80Å Ga0.5In0.5P superlattice was grown, and superlattice satellite peaks were observed in the X-ray rocking curves. The appearance of misfit dislocations suggests localized intermixing at the interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 49
Copyright
Copyright © Materials Research Society 1993

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References

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