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Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

Published online by Cambridge University Press:  17 March 2011

Jian-Yue Jina ,
Irene Rusakova ,
Qinmian Li ,
Jiarui Liu  and
Wei-Kan Chu
Jian-Yue Jina
Affiliation:
Physics Department, and Texas Center for Superconductivity, University of Houston, Houston, TX 77204
Irene Rusakova
Affiliation:
Physics Department, and Texas Center for Superconductivity, University of Houston, Houston, TX 77204
Qinmian Li
Affiliation:
Physics Department, and Texas Center for Superconductivity, University of Houston, Houston, TX 77204
Jiarui Liu
Affiliation:
Physics Department, and Texas Center for Superconductivity, University of Houston, Houston, TX 77204
Wei-Kan Chu
Affiliation:
Physics Department, and Texas Center for Superconductivity, University of Houston, Houston, TX 77204
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Abstract

Low temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B5.6
Copyright
Copyright © Materials Research Society 2000

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