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Vacancy-type and electrical defects in amorphous silicon probed by positrons and electrons

Published online by Cambridge University Press:  28 February 2011

S. Roorda ,
R. A. Hakvoort ,
A. van Veen ,
P. A. Stolk  and
F. W. Saris
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, NL-1098 SJ Amsterdam, The Netherlands
R. A. Hakvoort
Affiliation:
Interfaculty Reactor Institute, Delft Univ. of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
A. van Veen
Affiliation:
Interfaculty Reactor Institute, Delft Univ. of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
P. A. Stolk
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, NL-1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, NL-1098 SJ Amsterdam, The Netherlands
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Abstract

Amorphous Si has been investigated by variable-energy positron annihilation spectroscopy (PAS) and lifetime measurements of optically generated free carriers. The density of positron-trapping defects can be reduced by thermal annealing at 500°C. Simultaneously, the density of bandgap states is reduced as indicated by an increased photocarrier lifetime. Hydrogen, implanted and annealed at 150°C, leads to an increased photocarrier lifetime and reduced positron trapping. It appears that (some of) the electrical defects are associated with positron-trapping, and therefore possibly vacancy-type, structural defects. Finally, both methods have been used to detect small amounts of ion irradiation damage in amorphous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 39
Copyright
Copyright © Materials Research Society 1992

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References

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