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Vibrational Lifetimes of Hydrogen in Silicon: Isotope Effects and MOSFET Reliability

Published online by Cambridge University Press:  17 March 2011

Gunter Lüpke ,
Baozhou Sun ,
Norman H. Tolk  and
Leonard C. Feldman
Gunter Lüpke
Affiliation:
Department of Applied Science, The College of William and Mary, Williamsburg, Virginia 23187
Baozhou Sun
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
Norman H. Tolk
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
Leonard C. Feldman
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
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Abstract

Characterization of defect and impurity reactions, dissociation and migration in semiconductors requires detailed understanding of rates and pathways of vibrational energy flow, of energy transfer channels and of coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. We describe recent experiments which measure the vibrational lifetime of the Si-H bond in various defect configurations and show the relationship between these lifetimes and silicon MOSFET reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H7.1
Copyright
Copyright © Materials Research Society 2004

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References

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