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Visible Emission from Thin-Film Phosphors of Amorphous AlN:Cu, Mn, and Cr

Published online by Cambridge University Press:  17 March 2011

M. L. Caldwell
Affiliation:
Condensed Matter and Surface Science Program Ohio University Athens, OH 45701
A. L. Martin
Affiliation:
Condensed Matter and Surface Science Program Ohio University Athens, OH 45701
C. M. Spalding
Affiliation:
Condensed Matter and Surface Science Program Ohio University Athens, OH 45701
P. G. Van Patten
Affiliation:
Condensed Matter and Surface Science Program Ohio University Athens, OH 45701
M. E. Kordesch
Affiliation:
Condensed Matter and Surface Science Program Ohio University Athens, OH 45701
H. H. Richardson
Affiliation:
Condensed Matter and Surface Science Program Ohio University Athens, OH 45701
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Abstract

Luminescence studies of amorphous AlN doped with Cu, Mn, or Cr were performed at 300 K. Thin films of Cu, Mn, and Cr doped amorphous AlN, ∼200 nm thick, were grown on p-doped silicon (111) substrates using RF magnetron sputtering in a nitrogen atmosphere. Cathodoluminescence (CL) showed that pure Cu doped amorphous AlN has strong emission in the blue (∼420 nm) and Mn and Cr doped films luminesce in the red (∼690 nm). Cr+3 emission is more intense than Mn+4 because chromium does not suffer from incomplete charge compensation in the III-V semiconductor. Luminescence studies of crystalline and amorphous AlN:Mn thin films showed a red shift in the emission peak by almost 100 nm and is believed to be caused by the different crystal field of the amorphous host compared to the crystalline host material. Secondary ion mass spectrometry (SIMS) depth profiling was conducted to confirm the presence of the Cu and Cr in the films and to show the amount of dopant in relation to the Si substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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