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Visible-Light Sensitivity in N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering

  • Yoshitaka Nakano (a1), Takeshi Morikawa (a2) and Takeshi Ohwaki (a3)

We report on visible-light sensitivity in N-doped ZnO (ZnO:N) films that were deposited on ITO/quartz substrates by reactive magnetron sputtering. Colored ZnO:N samples showed enhanced polycrystallization and a significant decrease in optical band gap from 3.1 to 2.3 eV with increasing N doping concentration, as determined by x-ray diffraction and optical absorption measurements. Deep-level optical spectroscopy measurements revealed three characteristic deep levels located at ∼0.98, ∼1.20, and ∼2.21 eV below the conduction band. In particular, the pronounced 2.21 eV band is newly introduced by the N doping and behaves as part of the valence band, resulting in the band-gap narrowing of ZnO. Therefore, this deep level is probably one origin of visible-light sensitivity in ZnO:N.

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1. Asahi R., Morikawa T., Ohwaki T., Aoki K., and Taga Y., Science 293, 269 (2001).
2. Nakano Y., Morikawa T., Ohwaki T., and Taga Y., Appl. Phys. Lett. 86, 132104 (2005).
3. Yan Y., Zhang S.B., and Pantelides S.T., Phys. Rev. Lett. 86, 5723 (2001).
4. Futsuhara M., Yoshioka K., and Takai O., Thin Solid Films 317, 322 (1998).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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