Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-23T18:26:02.030Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Reflectometry Determination of Structural Information from Atomic Layer Deposition Nanometer-scale Hafnium Oxide Thin Films

Published online by Cambridge University Press:  01 February 2011

Donald Windover ,
D. L. Gil ,
J. P. Cline ,
A Henins ,
N. Armstrong ,
P. Y. Hung ,
S. C. Song ,
R. Jammy  and
A. Diebold
Donald Windover
Affiliation:
donald.windover@nist.gov, National Institute of Standards and Technology, Ceramics Division, 100 Bureau Drive, Gaithersburg, MD, 20899-8520, United States, 301-975-6102, 301-975-5334
D. L. Gil
Affiliation:
david.gil@coruscavi.com, Coruscavi Software, Washington, DC, 20037, United States
J. P. Cline
Affiliation:
jcline@nist.gov, National Institute of Standards and Technology, Ceramics Division, Gaithersburg, MD, 20899, United States
A Henins
Affiliation:
albert.henins@nist.gov, National Institute of Standards and Technology, Ceramics Division, Gaithersburg, MD, 20899, United States
N. Armstrong
Affiliation:
nicholas.armstrong@uts.edu.au, UTS, Department of Physics and Advanced Materials, Sydney, N/A, Australia
P. Y. Hung
Affiliation:
py.hung@sematech.org, SEMATECH, Austin, TX, 78741, United States
S. C. Song
Affiliation:
sc.song@sematech.org, SEMATECH, Austin, TX, 78741, United States
R. Jammy
Affiliation:
raj.jammy@sematech.org, SEMATECH, Austin, TX, 78741, United States
A. Diebold
Affiliation:
ADiebold@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, Albany, NY, 12203, United States
Get access

Abstract

This work demonstrates the application of a Markov Chain Monte Carlo (MCMC) approach to modeling X-ray reflectometry (XRR) data taken from a sub 10 nm Hafnium oxide film. We present here a comparison of two structural models for a 6 nm HfxOy atomic layer deposition (ALD) film on Si. Using the MCMC method and two distinct structural models, we show evidence of a thin interface between the HfxOy and Si layers with a density much higher than native SiO2. Results from genetic algorithm XRR analysis and thickness measurements using cross-sectional transmission electron microscopy are included for comparison. We also demonstrate that our interpretation of HfxOy thickness differs between the two structural models (i.e., total film thicknesses may be partially additive within each model).

Keywords

x-ray reflectivitythin filmHf
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H07-05
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pietsch, U., Holý, V., and Baumbach, T., High-resolution X-ray scattering: from thin films to lateral nanostructures. 2004, New York: Springer.Google Scholar
2. Chason, E. and Mayer, T.M., Thin film and surface characterization by specular X-ray reflectivity. Critical Reviews in Solid State and Materials Sciences, 1997. 22(1): p. 1.Google Scholar
3. Parratt, L.G., Surface studies of solids by total reflection of X-rays. Phys. Rev., 1954. 95: p. 359.Google Scholar
4. Nevot, L. and Croce, P., Characterization of Surfaces by Grazing X-Ray Reflection - Application to Study of Polishing of Some Silicate-Glasses. Revue De Physique Appliquee, 1980. 15(3): p. 761.Google Scholar
5. Bowen, D.K. and Deslattes, R.D., X-ray metrology by diffraction and reflectivity. AIP Conference Proceedings, 2001. 550(550): p. 570.Google Scholar
6. Wormington, M., et al., Characterization of structures from X-ray scattering data using genetic algorithms. Philosophical Transactions of the Royal Society of London Series a-Mathematical Physical and Engineering Sciences, 1999. 357(1761): p. 2827.Google Scholar
7. Sivia, D.S., Data Analysis A Bayesian Tutorial. 1996, Oxford: Oxford University Press.Google Scholar
8. Wallace, R.M. and Wilk, G.D., High-kappa dielectric materials for microelectronics. Critical Reviews in Solid State and Materials Sciences, 2003. 28(4): p. 231.Google Scholar
9. Windover, D., et al., Characterization of atomic layer deposition using X-ray reflectometry. AIP Conference Proceedings, 2005. 788(788): p. 161.Google Scholar
10. Fishman, G.S., Monte Carlo concepts, algorithms and applications. 1996, New York: Springer-Verlag.Google Scholar
11. Taylor, B.N. and Kuyatt, C.E., Guidelines for evaluating and expressing the uncertainty of NIST measurement results. 1994 ed. NIST Technical Note 1297. 1994, Gaithersburg, MD: National Institute of Standards and Technology, U.S. Department of Commerce.Google Scholar