A pulsed proton beam, ˜200 ns in duration, has been used to melt and regrow single crystal silicon. The protons had an energy of 300 kev, yielding a measured energy density of 0.8–2.0 J/cm2. The method of transient conductivity has been used to determine the melt depths, melt durations, and regrowth velocities. The measured values for 2.0 J/cm2 were, respectively, 1.7 μm, 2 μsec, and 1.4 m/sec.
Computer generated melt curves were compared to experiment with good agreement. The energy required to initiate melt was determined, and a linear dependence of melt depth with energy has been observed.