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X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers

  • J. Wittge (a1), A. Danilewsky (a1), D. Allen (a2), P. McNally (a2), Z. J. Li (a3), T. Baumbach (a3), E. Gorostegui-Colinas (a4), J. Garagorri (a4), M. R. Elizalde (a4), D. Jacques (a5), M. C. Fossati (a6), D. K. Bowen (a6) and B. K. Tanner (a6)...
Abstract

The nucleation of dislocations at indents in silicon following rapid thermal annealing (RTA) has been examined by X-ray diffraction imaging (topography). For indentation loads below 200 mN, no slip bands were generated from the indent sites following RTA at 1000 °C under spike conditions. Upon plateau annealing at 1000 °C, slip dislocations were propagated from some indents but not all. Slip was also observed from edge defects not associated with indentation. For 500-mN indentation load, large scale dislocation sources were generated from the indent sites propagating on two of the four {111} slip planes. These dislocations multiplied into macroscopic-scale slip bands. A significant change in morphology was observed in the 60° dislocation segments after the screw segment reached the rear surface of the wafer. Dislocations changed line direction and in some cases appeared to leave the Peierls trough during glide.

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Author to whom correspondence should be addressed. Electronic mail: b.k.tanner@durham.ac.uk
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D. Allen , J. Wittge , A. Zlotos , E. Gorostegui-Colinas , J. Garagorri , P. J. Mcnally , A. N. Danilewsky , and M. R. Elizalder (2010). “Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography,” Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X268, 383387.10.1016/j.nimb.2009.10.174

D. K. Bowen and B. K. Tanner (2006). X-ray Metrology in Semiconductor Manufacturing (CRC/Taylor and Francis, Boca Raton/London).10.1201/9781420005653

D. K. Bowen , M. Wormington , and P. Feichtinger (2003). “A novel digital X-ray topography system,” J. Phys. D JPAPBE 0022-372736, A17–23.10.1088/0022-3727/36/10A/305

X. F. Brun and S. N. Melkote (2006). “Evaluation of handling stresses applied to EFG silicon wafer using a Bernoulli gripper,” Conference Record of 2006 IEEE Fourth World Conference on Photovoltaic Energy Conversion, pp. 13461349.

X. F. Brun and S. N. Melkote (2009). “Analysis of stresses and breakage of crystalline silicon wafers during handling and transport,” Sol. Energy Mater. Sol. Cells SEMCEQ 0927-024893, 12381247.10.1016/j.solmat.2009.01.016

R. F. Cook (2006). “Strength and sharp contact fracture of silicon,” J. Mater. Sci. JMTSAS 0022-246141, 841872.10.1007/s10853-006-6567-y

A. Danilewsky , J. Wittge , A. Hess , A. Cröll , D. Allen , P. McNally , P. Vagoviče , A. Cecilia , Z. Li , T. Baumbach , E. Gorostegui-Colinas , and M. R. Elizalde (2010). “Dislocation generation related to microcracks in Si-wafers: High temperature in situ study with white beam X-ray topography,” Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X268, 399402.10.1016/j.nimb.2009.09.013

A. N. Danilewsky , R. Simon , A. Fauler , M. Fiederle , and K. W. Benz (2003). “White beam X-ray topography at the synchrotron light source ANKA, Research Centre Karlsruhe,” Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X199, 7174.10.1016/S0168-583X(02)01401-5

W. C. Dash (1956). “Copper precipitation on dislocations in silicon,” J. Appl. Phys. JAPIAU 0021-897927, 11931195.10.1063/1.1722229

B. K. Tanner , D. Midgley , and M. Safa , (1977). “Dislocation contrast in X-ray synchrotron topographs,” J. Appl. Crystallogr. JACGAR 0021-889810, 281286.10.1107/S0021889877013491

P. Rupnowski and B. Spoori (2009). “Strength of silicon wafers: Fracture mechanics approach,” Int. J. Fract. IJFRAP 0376-9429155, 6774.10.1007/s10704-009-9324-9

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Powder Diffraction
  • ISSN: 0885-7156
  • EISSN: 1945-7413
  • URL: /core/journals/powder-diffraction
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