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The growth of boron doped (100) textured diamond films by three-stepprocess

Published online by Cambridge University Press:  15 July 2000

Chau-Shu Chen ,
Chi-Ling Chen  and
Juh-Tzeng Lue
Chau-Shu Chen
Affiliation:
Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
Chi-Ling Chen
Affiliation:
Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
Juh-Tzeng Lue*
Affiliation:
Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
*
jtlue@phys.nthu.edu.tw
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Abstract

p-type (100) faceted diamond films can be successfully grown by bubbling H2 through liquid B(OCH3)3 during the Microwave Plasma Enhanced Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron micrographs (SEM) convincingly illustrate that diamond-film growth on silicon substrates by a three-step process yields good uniformity with preferential orientation. The field emission current density of the boron doped diamond films can be enhanced from 0.7 μA/cm2 for the as grown films to 140 μA/cm2 at an applied field of 20 V/μm by hydrogenation treatment.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 11 , Issue 1 , July 2000 , pp. 3 - 8
Copyright
© EDP Sciences, 2000

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