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Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers

Published online by Cambridge University Press:  01 February 2011

K. Dornich ,
T. Hahn  and
J.R. Niklas
K. Dornich
Affiliation:
Technische Universität Bergakademie Freiberg, Silbermannstr.1, D-09596 Freiberg, Germany corresponding author: Electronic address:KayDornich@gmx.de
T. Hahn
Affiliation:
Technische Universität Bergakademie Freiberg, Silbermannstr.1, D-09596 Freiberg, Germany corresponding author: Electronic address:KayDornich@gmx.de
J.R. Niklas
Affiliation:
Technische Universität Bergakademie Freiberg, Silbermannstr.1, D-09596 Freiberg, Germany corresponding author: Electronic address:KayDornich@gmx.de
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Abstract

Recent progress in experimental technique made it possible to improve the sensitivity of microwave detected photoconductivity by several orders of magnitude. This opens completely new possibilities for a contact less non-destructive electrical defect characterization of silicon wafers and even of epitaxial layers on substrates with extremely low resistivity. Electrical properties such as lifetime, mobility and diffusion length can be measured without contacts also at very low injection levels with a resolution only limited by the diffusion length of the charge carriers. The doping level of the material plays no major role.

Owing to the high sensitivity, thermal excitation of charge carriers out of defect levels filled during the photo pulse can also be observed. This leads to defect specific photoconductivity transients which deliver pieces of information like DLTS, however, again without contacts, non critical doping, and with high spatial resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E11.2
Copyright
Copyright © Materials Research Society 2005

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