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Silicon Field Emission Arrays Coated with CoSi2 Layer Grown by Reactive Chemical Vapor Deposition

Published online by Cambridge University Press:  14 March 2011

Byung Wook Han ,
Hwa Sung Rhee ,
Byung Tae Ahn  and
Nam Yang Lee
Byung Wook Han
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon 305-701, Korea
Hwa Sung Rhee
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon 305-701, Korea
Byung Tae Ahn
Affiliation:
Department of Materials Science and Engineering, KAIST, Taejon 305-701, Korea
Nam Yang Lee
Affiliation:
Orion Electric Co., Suwon, 442-749, Korea
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Abstract

We prepared Si emitters coated with an MOCVD CoSi2 layer to improve the emission properties. The CoSi2 layer was grown in situ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650 °C. The CoSi2 layer was conformally coated on the Si emitter tips and had a twinned structure at the epitaxial CoSi2/Si interface. The CoSi2-coated Si emitters showed an enhanced emission due to the increase of the number of emitting site from Fowler-Nordheim plot. The fluctuation of emission current was reduced by CoSi2 coating. But the long-term stability was not much improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , R5.1.1
Copyright
Copyright © Materials Research Society 2000

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References

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