Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-23T19:13:17.568Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxy Of GaAs on Si: MBE and OMCVD

Published online by Cambridge University Press:  28 February 2011

Jhang W. Lee ,
Jack P. Salerno ,
Ron P. Gale  and
John C.C. Fan
Jhang W. Lee
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
Jack P. Salerno
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
Ron P. Gale
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
John C.C. Fan
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
Get access

Abstract

Growth technique dependent factors are compared for molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD) that are related to the GaAs on Si epitaxy. The comparison, both for growth processes and as-grown material characteristics, indicates that material qualities of these layers provided by the two growth techniques are comparable in many aspects, but differ in morphological texture, residual stress, and occasionally Schottky barrier height. These issues are discussed further with our recent OMCVD results in order to ensure the OMCVD advantages for GaAs on Si wafer engineering, which are referred as an easy scale-up and a large throughput.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 33
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES:

1. Gale, R. P., Fan, J. C. C., Tsaur, B-Y., Turner, G. W., and Davis, F. M., IEEE electron Dev. Lett. EDL-2 (7), 169 (1981).Google Scholar
2. Tsaur, B-Y. and Metze, G. M., Appl. Phys. Lett. 45 (5) 535 (1984).Google Scholar
3. Wang, W. I., Appl. Phys. Lett. 44 (12), 1149 (1984).Google Scholar
4. Akiyama, M., Kawarada, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23 (11) L843 (1984).Google Scholar
5. Choi, H. K., Turner, G. W., Windhorn, T. H., and Tsaur, B-Y., IEEE Electron Dev. Lett. EDL-7 (9), 500 (1986).Google Scholar
6. Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminish, K., Jpn. J. Appl. Phys. 23 (12), L919 (1984).Google Scholar
7. Shichijo, H., Lee, J. W., McLevige, W. V., and Taddiken, A. H., IEEE Electron Dev. Lett. EDL-8 (3), 121 (1987).Google Scholar
8. Windhorn, T. H. and Metze, G. M., Appl. Phys. Lett. 47 (10), 1031 (1985).Google Scholar
9. Sakai, S., Soga, T., Takeyasu, M., and Umeno, M., Appl. Phys. Lett. 48 (6), 413 (1986).Google Scholar
10. Akiyama, M., Kawarada, Y., Ueda, T., Nishi, S., and Kaminishi, K., J. Cryst. Growth, 77, 490 (1986).Google Scholar
11. Soga, T., Hattori, S., Sakai, S., and Umeno, M., J. Cryst. Growth, 77, 498 (1986).Google Scholar
12. Shastry, S. K., Zemon, S., and Oren, M., J. Cryst. Growth, 77, 503 (1986).Google Scholar
13. Ishizaka, A., Nakagawa, K., and Shiraki, Y., in Collected Papers, 2nd Intl. Symposium on MBE and Related Clean Surface Techniques, Tokyo, 1982, pp. 182.Google Scholar
14. Kawabe, M. and Ueda, T., Jpn. J. Appl. Phys. 25 (4), L285 (1986).Google Scholar
15. Kroemer, H., in Heteroepitaxy on Silicon, Fan, J. C. C. and Poate, J. M., eds (MRS, Pittsburg, PA, 1986) P. 3.Google Scholar
16. Lee, J. W., in Heteroepitaxy on Silicon, edited by Fan, J. C. C. and Poate, J. M. (MRS, Pittsburgh, PA, 1986) p.29.Google Scholar
17. Lee, J. W. and Tsai, H. L., J. Vac. Sci. Tech. B5 (to be published).Google Scholar
18. Lee, J. W., Tsai, H. L., and Matyi, R., 7th MBE Workshop, Sept. 1986, Boston, MA.Google Scholar
19. Otsuka, N., Choi, C., Nakamura, Y., Nagakura, S., Fischer, R., Peng, C. K., and Morkoc, H., Appl. Phys. Lett. 49 (5), 277 (1986).Google Scholar
20. Ishida, K., Akiyama, M., and Nishi, S., Jpn. J. Appl. Phys. 25 (4), L288 (1986).Google Scholar
21. Lee, J. W. and Tsai, H. L., Electronic Materials Conference Boulder, CO 1985.Google Scholar
22. Uppal, P. N. and Kroemer, H., J. Vac. Sci. Tech. B4 (2), 641 (1986).Google Scholar
23. Fischer, R., Neuman, D., Zabel, H., Morkoc, H., Choi, C., and Otsuka, N., Appl. Phys. Lett. 48 (18), 1223 (1986).Google Scholar
24. Bedair, S. M., Hamaguchi, N., Moore, D., Choi, C., and Otsuka, N., Appl. Phys. Lett. 48 (18), 1223 (1986)Google Scholar
25. Lee, J. W., in GaAs and Related Compounds 1986, edited by Lindley, W. T. (Institute of Physics, Bristol) p.111.Google Scholar
26. Tsaur, B-Y., Fan, J. C. C., Turner, G. W., Davis, F. M. and Gale, R. P., in Proceedins of 16th IEEE Photovoltaic Specialists Conference-1982, p.1148.Google Scholar
27. Tsang, W. T., Appl. Phys. Lett. 45, 1234 (1984).Google Scholar
28. Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., cho, A. Y., Appl. Phys. Lett. 49 (13), 815 (1987).Google Scholar
29. Zemon, S., Jagannath, C., Koteles, E. S., Shastry, S. K., Norris, P., Lambert, G., Choudhury, A. N. M., and Armiento, C. A., in GaAs and Related Compounds 1986, edited by Lindley, W. T. (Institute of Physics, Bristol) p. 141.Google Scholar
30. Lee, J. W., Shichijo, H., Tsai, H. L., and Matyi, R. J., Appl. Phys. Lett. 50 (1), 31 (1987).Google Scholar
31. Weyher, J. and Van de Ven, J., J. Cryst. Growth, 63, 285 (1983).Google Scholar
32. Koch, S. M., Rosner, S. J., Schlom, D., Harris, J. S. Jr., in Heteroepitaxy on Silicon, edited by Fan, J. C. C. and Poate, J. M. (MRS, Pittsburgh, PA, 1986) p. 37.Google Scholar
33. Ito, C. R., Feng, M., Eu, V. K., and Kim, H. B., in Heteroepitaxy on Silicon, edited by Fan, J. C. C. and Poate, J. M. (MRS, Pittsburgh, PA 1986) p. 197.Google Scholar
34. Neuman, D. A., Zhu, X., Zabel, H., Henderson, T., Fischer, R., Masselink, W. T., Klein, J., Peng, C. K., and Morcok, H., J. Vac. Sci. Tech. B 4 (2), G42 (1986).Google Scholar
35. Zanino, K., Bean, R., Hay, K., Fischer, R., and Morkoc, H., in Heteroepitaxy on Silicon, edited by Fan, J. C. C. and Poate, J. M. (MRS, Pittsburgh, PA, 1986) p. 141.Google Scholar
36. Shichijo, H. and Lee, J. W., in Heteroepitaxy on Silicon, edited by Fan, J. C. C. and Poate, J. M. (MRS, Pittsburgh, PA, 1986) p. 173 Google Scholar
37. Duncan, W. M., Lee, J. W., Matyi, R. J., and Liu, H-Y., J. Appl. Phys. 59 (16), 2161 (1986).Google Scholar
38. Salerno, J. P., Lee, J. W., McCullough, R. E., and Gale, R. P., this Proceedings.Google Scholar