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Reentrant Growth in Kinetic Thin-Film Deposition on Stepped Surfaces

Published online by Cambridge University Press:  21 February 2011

Rong-Fu Xiao*
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Abstract

We have studied the reentrant growth in kinetic thin-film deposition on stepped surfaces using a Monte Carlo simulation. The results show that the reentrant oscillation of two dimensional nucleation growth occurs as a result of the variation of surface diffusion length with deposition temperature, and that it is a natural phenomenon in kinetic thin-film epitaxy on a substrate with a permanent step source.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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