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Investigation of Metal Induced Surface Defects in Czochralski Si Following Rapid Thermal Processing by Thermal Wave Modulated Reflectance Method

Published online by Cambridge University Press:  28 February 2011

S. Hahn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
W.L Smith
Affiliation:
Therma-Wave, Inc., 47320 Mission Falls Court, Fremont, CA 94539
H. Suga
Affiliation:
Mitsubishi Materials Corporation, Central Research Institute, 1-297 Kitabukuro-cho, Omiya, Saitarna 330, Japan
J.-G. Park
Affiliation:
Samsung Electronics, Kihung Plant, Yongin-Gun, Kyungki-Do, Korea
C.-S. Lim
Affiliation:
Samsung Electronics, Kihung Plant, Yongin-Gun, Kyungki-Do, Korea
Y.-S. Kwak
Affiliation:
Samsung Electronics, Kihung Plant, Yongin-Gun, Kyungki-Do, Korea
R. Meinecke
Affiliation:
AG Associates, 1325 Borregas Avenue, Sunnyvale, CA 94089
R.R. Kola
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
G.A. Rozgonyi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
K.D. Kwack
Affiliation:
Department of Electronic Engineering, Hanyang University, 133 Hangdang-Dong, Sungdong-Ku, Seoul, Korea
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Abstract

Using thermal wave mapping and imaging techniques in conjunction with x-ray transmission topography and transmission electron microscopy, precipitation behavior of various fast and slowly diffusing metallic impurities such as Au, Co, Cu, Fe, Mo, Ni, Pd, Pt, W and Zn in Czochralski Si following rapid thermal processing are investigated. Our data have shown that thermal wave signal is sensitive to certain types of metal-induced surface defects (most likely metal silicides) and associated crystallographic defects. In addition, the comparison between thermal wave and x-ray imaging methods shows an interesting speciesdependent complimentary relationship.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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