Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-25T01:04:45.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic Resonance of Oxygen-Related Defects in Silicon

Published online by Cambridge University Press:  28 February 2011

J. Michel ,
J. R. Niklas  and
J.-M. Spaeth
J. Michel
Affiliation:
University of Paderborn, Fachbereich 6, Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
J. R. Niklas
Affiliation:
University of Paderborn, Fachbereich 6, Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
J.-M. Spaeth
Affiliation:
University of Paderborn, Fachbereich 6, Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
Get access

Abstract

The electron spin resonance (ESR) of a number of vacancy-oxygen complexes created in electron irradiated Si containing oxygen is briefly reviewed. In these centers the unpaired spin density is highly localised (50–70%) on two Si sites within the complex. The ESR spectra of several paramagnetic thermal donors (TD+) formed by annealing oxygen-rich Si at 450 °C for one to several hundred hours are reviewed as well as recent experiments under uniaxial stress from which for the ground state a 2 valley effective mass-like wavefunction was derived. Results of electron nuclear double resonance (ENDOR) experiments on the TD+ ESR line “NL8” are presented for the first time. They reveal that all TD's identified in IR-spectroscopy are superimposed in the NL8 ESR line and that upon growth of the TD the structure of the core and the symmetry of the TD's is not changed. The hyperfine interactions with up to 7 shells of Si nuclei of 5 TD+'s were determined. Their size and tensor orientations are consistent with the two-valley effective mass-like wavefunction. 4 TD's identified in ENDOR could be correlated with IR-bands from growth kinetics. Although the ENDOR experiments so far do not yet lead to a detailed TD model, the model possibilities are narrowed down considerably by these results. The core must consist of nuclei with very low magnetic abundancy. It is tentatively suggested, that the core contains an O2 molecule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 111
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1] Watkins, G.D., Corbett, J.W. and Walker, R.M., J. Appl. Phys. 30, 1198 (1959)Google Scholar
[2] Watkins, G.D. and Corbett, J.W., Phys.Rev. 121, 1001 (1960)Google Scholar
[3] Watkins, G.D. and Corbett, J.W., Phys.Rev. 121, 1015 (1960)Google Scholar
[4] Bemski, G., J. Appl. Phys. 30, 1195 (1959)Google Scholar
[5] Corbett, J.W., Watkins, G.D., Chrenko, R.M. and McDonald, R.S., Phys. Rev. 121, 1015 (1960)Google Scholar
[6] Lee, Y.H. and Corbett, J.W., Phys. Rev. B13, 2653 (1976)Google Scholar
[7] Jung, W. and Newell, G.S., Phys. Rev. 132, 648 (1963)Google Scholar
[8] Brower, K.L., Rad. Effects 8, 213 (1971)Google Scholar
[9] Brower, K.L., Phys. Rev. B4, 1968 (1971)CrossRefGoogle Scholar
[10] Kaiser, W., Frisch, H.L. and Reiss, H., Phys. Rev. 112, 1546 (1958)Google Scholar
[11] Pajot, B., Compain, H., Leroneille, J. and Clerjaud, B., Physica 117B, and 118B, 110 (1983)Google Scholar
[12] Oeder, R. and Wagner, P. in: Defects in Semiconductors II, edited by Mahajan, S. and Corbett, J.W. (North Holland, New York, 1983), p. 171 Google Scholar
[13] Wagner, P., Holm, C., Sirtl, E., Oeder, R. and Zulehner, W. in: Festkörperprobleme (Advances in Solid State Physics), vol. XXIV, Grosse, P., ed., Vieweg, Braunschweig, 1984), p. 191 Google Scholar
[14] Muller, S.H., Sprenger, M., Sieverts, E.G. and Ammerlaan, C.A.J., Solid State Comm. 25, 987 (1978)Google Scholar
[15] Muller, S.H., Sieverts, E.G. and Ammerlaan, C.A.J., Inst. of Physics, Conference Series 46, 297 (1979)Google Scholar
[16] Muller, S.H., Ph.D. Thesis, University of Amsterdam, 1981 Google Scholar
[17] Watkins, G.D., first pointed out at the 1 3 th Int. Conf. on Defects in Semiconductors, Coronado, CA, 1984, following the talk by Benton, J.L. [18]Google Scholar
[18] Benton, J.L., Lee, K.M., Freeland, P.E. and Kimerling, L.C. in: 13th International Conf. on Defects in Semiconductors, Kimerling, L.C. and Parsey, J.M. Jr/, eds. (The Metallurgical Soc. of AIME, New York, 1985), p. 647Google Scholar
[19] Stavola, M., Lee, K.M., Nabity, J.C., Freeland, P.E. and Kimerling, L.C., presented at the 1985 MSR Spring Meeting, San Francisco, CA, 1985 (to be published)Google Scholar
[20] Farmer, J.W., Meese, J.M., Henry, P.M. and Lamp, C.D.in: 13th Int. Conf. on Defects in Semiconductors, op. cit., p. 639Google Scholar
[21] Takippe, V.J., Chandrasekhar, H.R., Fischer, P. and Ramdas, A.K., Phys. Rev. B6, 2348 (1972)Google Scholar
[22] Lee, K.M., Trombetta, J.M. and Watkins, G.D., presented at the 1985 MRS Spring Meeting, San Francisco, CA, 1985 (to be published)Google Scholar
[23] Niklas, J.R., Habilitationsschrift, University of Paderborn, 1983 Google Scholar
[24] Niklas, J.R. and Spaeth, J.-M., phys. stat. sol.(b), 101, 221 (1980)Google Scholar
[25] Hale, E.B. and Mieher, R.L., Phys. Rev. 184, 739 (1969)Google Scholar
[26] Hale, E.B. and Mieher, R.L., Phys. Rev. 184, 751 (1969)Google Scholar
[27] Ourmazd, A., Schröter, W. and Bourret, A., J. Appl. Phys. 56, 1670 (1984)Google Scholar
[28] Stavola, M. and Snyder, L.C. in: Defects in Silicon, edited by Bullis, W.M., and Kimerling, L.C. (Electrochemical Society, Pennington, N.Y., 1983),p.61 Google Scholar
[29] Robertson, J. and Ourmazd, A., Appl. Phys. Lett. 46, 559 (1985)Google Scholar
[30] -Feher, G., Phys. Rev. 114, 219 (1959)Google Scholar
[31] Newman, R.C., submitted to J. Phys. C, 1985 Google Scholar
[32] Christe, K.O., Wilson, R.D., Goldberg, I.B., Inorg. Chemistry 15, 1271 (1976)Google Scholar
[33] Gösele, U. and Tan, Ty., Appl. Phys. A 28, 79 (1982)Google Scholar