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Chlorine Doping of Cadmium Sulfide on the Example of CBD CdS

Published online by Cambridge University Press:  31 January 2011

Hiie Jaan ,
Federico Quinci ,
Vanni Lughi ,
Valter Sergo ,
Vello Valdna ,
Valdek Mikli ,
Erki Kärber  and
Taavi Raadik
Hiie Jaan
Affiliation:
jhiie@staff.ttu.ee, Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, Tallinn, Harjumaa, 19086, Estonia, +3726203366, +3726203367
Federico Quinci
Affiliation:
quincif@tiscali.it, University of Trieste, Department of Materials and Natural Resources, Trieste, Italy
Vanni Lughi
Affiliation:
vlughi@units.it, University of Trieste, Department of Materials and Natural Resources, Trieste, Italy
Valter Sergo
Affiliation:
sergo@univ.trieste.it, University of Trieste, Department of Materials and Natural Resources, Trieste, Italy
Vello Valdna
Affiliation:
vellov@hot.ee, Tallinn University of Technology, Department of Materials Science, Tallinn, Harjumaa, Estonia
Valdek Mikli
Affiliation:
miku@staff.ttu.ee, Tallinn University of Technology, Department of Materials Science, Tallinn, Harjumaa, Estonia
Erki Kärber
Affiliation:
erki.krbr@hot.ee, Tallinn University of Technology, Department of Materials Science, Tallinn, Harjumaa, Estonia
Taavi Raadik
Affiliation:
taavi.raadik@ttu.ee, Tallinn University of Technology, Department of Materials Science, Tallinn, Harjumaa, Estonia
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Abstract

The role of thermal annealing and of CdCl2 as a main source of electrically active but vaporizable chlorine doping in chemical bath deposited CdS thin films is studied. The films were deposited on glass substrates from aqueous solution of either CdCl2, NH4Cl, NH4OH, and thiourea, or CdSO4, (NH4)2SO4, NH4OH, and thiourea. Films deposited in the presence of CdCl2 and annealed in H2 atmosphere at 310 and 420 °C show a resistivity lower than 10 Ω·cm, one order of magnitude less than for identically annealed films deposited in absence of CdCl2. Annealing at 420 °C in closed ampoules, where a counter pressure of CdCl2 builds up, leads to a lower resistivity on the order of 10−1 Ω·cm, confirming the key role of chlorine on the electronic properties. However, further characterization via photoluminescence raises new questions about chlorine-related defects and their role in the mechanisms that govern film resistivity.

Keywords

annealingII-VIelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-17
Copyright
Copyright © Materials Research Society 2009

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References

1. Shafarman, W. N. and Stolt, L. CuInGaSe2 Solar Cells, pp. 584–591, and B. E. McCandless and J. Sites Cadmium Telluride Solar Cells, pp. 631-633, in Handbook of Photovoltaic Science and Engineering, edited by A. Luque and S. Hegedus (Wiley, 2003).Google Scholar
2. McCandless, B. E. Shafarman, W. N., Conf. Rec. WCPEC-3 (2003).Google Scholar
3. Altosaar, M. Kukk, P. Hiie, J. J. Inorg. Chemistry 28, 69(1983) (In Russian).Google Scholar
4. Shiraki, Y. and, T. Shimada Komatsubara, K. F. J. Appl. Physics 45, 3554(1974).Google Scholar
5. Hodes, G. Chemical Solution Deposition of Semiconductor Films, (Marcel Dekker Inc., 2003) pp. 40–50.Google Scholar
6.International PDF files of Cadmium Sulfide No: 01-089-0440, CSD: 81925(ICSD) and No: 01-074-9665, CSD: 154188(ICSD), (2007).Google Scholar
7. Kröger, F. A., Vink, H. J. and Boomgaard, J. van den, Z. phys. Chem. (B) 203 1 (1954); F. A. Kröger, The Chemistry of Imperfect Crystals, (North Holland Publ. Co., 1964).Google Scholar
8. Srivastava, O. K. and Secco, E. A. Canadian Journal of Chemistry 45, 1375, 3199(1967).Google Scholar