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Stable Electron Emission from ZnO Nanoemitters Grown with Pseudo-Catalyst

Published online by Cambridge University Press:  04 July 2014

Su-Hua Yang
Affiliation:
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
Yi-Ming Hsu
Affiliation:
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
Ming-Wei Tsai
Affiliation:
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan, R.O.C.
Ting-Jen Hsueh
Affiliation:
National Nano Devices Laboratories, Tainan 741, Taiwan, R.O.C.
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Abstract

Catalyst-free vapor phase transport was applied for the growth of ZnO nanoemitters. A single-crystalline ZnO:Al seed layer was deposited and used as a pseudo-catalyst. The desired morphology of nanostructures can be achieved by means of modifying the growth rates of crystal planes via adjustment in the growth conditions. The field emission characteristics of ZnO nanoemitters satisfied the Fowler-Nordheim relationship. The high aspect ratio of nanoemitters had a low turn-on electric field of 0.18 MV/m at emission current density of 0.1 μA/cm2. A stable electron emission with a variation of less than 14% was measured.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Han, Z., Liao, L., Wu, Y., Pan, H., Shen, S., and Chen, J., J. Hazard. Mater. 217–218, 100 (2012).CrossRefGoogle Scholar
Zhang, J., Qu, K., Yang, X., Wei, L., Zhang, X., Zhao, Z., and Wang, B., IEEE Electron Device Lett. 30, 1005 (2009).CrossRefGoogle Scholar
Robertson, J., Carbon 37, 759 (1999).CrossRefGoogle Scholar
Iijima, S., Nature 354, 56 (1991).CrossRefGoogle Scholar
Zhu, L., Xu, J., Xiu, Y., Hess, D. W., and Wong, C. P., J. Electron. Mater. 35, 195 (2006).CrossRefGoogle Scholar
Patra, M. K., Manzoor, K., Manoth, M., Vadera, S. R., and Kumar, N., J. Lumin. 128, 267 (2008).CrossRefGoogle Scholar
Ling, B., Wang, Y., Sun, X. W., Dong, Z. L., and Yang, N. X., IEEE J. Sel. Top. Quantum Electron. 17, 801 (2011).CrossRefGoogle Scholar
Comini, E., Baratto, C., Faglia, G., Ferroni, M., Vomiero, A., and Sberveglieri, G., Prog. Mater. Sci. 54, 1 (2009).CrossRefGoogle Scholar