Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-20T01:02:29.741Z Has data issue: false hasContentIssue false
  • English
  • Français

Interaction Between Ceria and Hydroxylamine

Published online by Cambridge University Press:  01 February 2011

Subramanian Tamilmani ,
Jilei Shan ,
Wayne Huang ,
Srini Raghavan ,
Robert Small ,
Cass Shang  and
Brandon Scott
Subramanian Tamilmani
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ.
Jilei Shan
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ.
Wayne Huang
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ.
Srini Raghavan
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ.
Robert Small
Affiliation:
EKC Technology, Inc., Hayward, CA.
Cass Shang
Affiliation:
EKC Technology, Inc., Hayward, CA.
Brandon Scott
Affiliation:
EKC Technology, Inc., Hayward, CA.
Get access

Abstract

Ceria containing slurries are increasingly used in the chemical mechanical polishing of CVD silicon oxide films to obtain STI structures. Unlike silica or alumina, ceria has redox characteristics. Because of this characteristic, removal of ceria particles from planarized surfaces may be possible using chemical reagents that can participate in redox reactions. One such reagent is hydroxylamine, which is already being used in copper CMP. The objective of the work reported in this paper was to characterize the reaction between ceria and hydroxylamine, especially with respect to dissolution of ceria particles. A kinetic study of the dissolution of ceria in hydroxylamine solutions maintained at various pH values has been performed. The extent and kinetics of dissolution of ceria has been determined by ICPMS. Removal of ceria particles from oxide surfaces using hydroxylamine-based chemistries has been investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F3.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Zhao, E., Xu, C. S., Semiconductor International p. 145, June (2001).Google Scholar
[2] Lee, S. et al. ; Proceedings of the CMP-MIC Conference. p. 163, (2000).Google Scholar
[3] Bonner, B. et al. ; Proceedings of the CMP-MIC Conference. p. 572, (2001).Google Scholar
[4] Lester, Maria A., Semiconductor International, May (2002).Google Scholar
[5] Leduc, P. et al. ; “CMP: Aiming for Perfect Planarization,” Proceedings of the CMP-MIC Conference. p. 239, (2002).Google Scholar
[6] Small, R.J., McGhee, L., Maloney, D. and Patterson, M.L., “Chemical mechanical polishing chemicals and process”, WO Patent 98/04646, (1998).Google Scholar
[7] Peterson, M.L., Small, R.J., Truong, T. and Lee, J., Semiconductor Fabtech, 11th edition, (2000).Google Scholar
[8] Puy, M. Van der and Dimmit, J.H., Hydroxylamine: Redox Properties of Hydroxylamines, Part 1. Inorganic Reactions. Technical Bulletins, AlliedSignal Inc., (1985).Google Scholar
[9] Tamilmani, S., Huang, W., Raghavan, S. and Small, R., Journal of The Electrochemical Society, 149 (12), G638–G642 (2002).Google Scholar
[10] Martell, A. E. and Smith, R. M., Critical stability constants, Plenum, New York (1974).Google Scholar