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Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants

Published online by Cambridge University Press:  25 February 2011

R. J. Schreutelkamp ,
K. T. F. Janssen ,
F. W. Saris ,
J. F. M. Westendorp  and
R. E. Kaim
R. J. Schreutelkamp
Affiliation:
F.O.M. Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
K. T. F. Janssen
Affiliation:
Philips Research Laboratories, p.o. box 80.000, 5600 JA Eindhoven, The Netherlands
F. W. Saris
Affiliation:
F.O.M. Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
J. F. M. Westendorp
Affiliation:
ASM Ion Implant, 123 Brimbal Avenue, Beverley, MA 01915, USA
R. E. Kaim
Affiliation:
ASM Ion Implant, 123 Brimbal Avenue, Beverley, MA 01915, USA
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Abstract

Buried amorphous layers are produced in Si(100) by implantation of 100 keV P+ and Si+ ions under channeling condition along the <100>-direction. Rutherford Backscattering Spectrometry in combination with channeling shows that a continuous buried amorphous. layer with a thickness of 1300 Å results under a crystalline toplayer with a thickness of 600 Å. After Solid Phase Epitaxy a highly concentrated defect layer remains for all implants at the depth where the two amorphous/crystalline interfaces of the buried amorphous layer meet. Planar channeling along (100)-direction shows that dislocation loops are present after SPE regrowth at the ‘interface’ of the two crystalline regions for all implants. The size of the dislocation loops becomes smaller in the presence of phosphorus. Moreover, channeling analysis shows that in case of Rapid Thermal Annealing treatment in addition to the SPE regrowth process the defect structures present after full recrystallization can be more easily dissolved in case of the phosphorus implants as compared to the silicon self implant

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 557
Copyright
Copyright © Materials Research Society 1989

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References

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