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A Fast and Precise Specimen Preparation Technique for TEM Investigation of Prespecified Areas of Semiconductor Devices

Published online by Cambridge University Press:  16 February 2011

Albert Romano ,
Jan Vanhellemont  and
Hugo Bender
Albert Romano
Affiliation:
Interuniversitair Micro-Elektronica Centrum (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium Chtedra d'Electrònica, Facultat de Física, Universitat de Barcelona, Diagonal 647, E-08028 Barcelona, Spain
Jan Vanhellemont
Affiliation:
Interuniversitair Micro-Elektronica Centrum (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
Hugo Bender
Affiliation:
Interuniversitair Micro-Elektronica Centrum (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
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Abstract

In this paper we present a rapid and highly precise plan view and cross-section specimen preparation technique for the localized thinning of semiconductor devices for TEM investigation. No special equipment except the commercially available one is required. Crosssection preparation takes about 6 hours, while plan view takes about 4 hours. Prespecified areas of 0.6 μm wide and 10 μm long can easily be thinned with transparency for CTEM and HREM. Using an iterative ion milling procedure allows to scan a complete device in HREM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 167
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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