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Power Feeding in Large Area PECVD of Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

J. Kuske ,
U. Stephan ,
O. Steinke  and
S. Röhlecke
J. Kuske
Affiliation:
Institute of Semiconductor Technology and Microsystems, Dresden University of Technology 01062 Dresden, Mommsenstraße 13, FR., Germany.
U. Stephan
Affiliation:
Institute of Semiconductor Technology and Microsystems, Dresden University of Technology 01062 Dresden, Mommsenstraße 13, FR., Germany.
O. Steinke
Affiliation:
Institute of Semiconductor Technology and Microsystems, Dresden University of Technology 01062 Dresden, Mommsenstraße 13, FR., Germany.
S. Röhlecke
Affiliation:
Institute of Semiconductor Technology and Microsystems, Dresden University of Technology 01062 Dresden, Mommsenstraße 13, FR., Germany.
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Abstract

Plasma processes are usually worked out in a small-scale environment (electrode area maximum 121 cm2, rf- and VHF- excitation frequencies). In order to meet the requirements of large area device applications they have to be upscaled. The investigations of glow discharge systems for different PECVD reactors (parallel plate- and coaxial electrodes) have shown, that the reactor design (power supply, line connection) sharply influences the large area deposition process. The voltage distribution on the driven electrode especially determines the uniformity of the deposited layer thickness. Possibilities which influence the voltage distribution on large areas will be discussed. The results of large area electrode description as an electrical line will be discussed in comparison with different reactor configurations and the optimization of the behavior of the deposition process. The experimental results of a coaxial reactor (electrode area 5000 cm2, substrate length 120 cm) show that a homogenous deposition of amorphous silicon (layer uniformity of thickness over the length better ± 7 %) by connecting the driven electrode with additional electrical devices is possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 27
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Bubenzer, A., Lechner, P., Schade, H., Rubel, H., PVSEC-7, Nagoya, Japan, Nov. 22–26, 1993.Google Scholar
[2] Röhlecke, S., PSE'94, Garmisch-Partenkirchen, FRG, September 19–23.Google Scholar
[3] Nonaka, S., Jap. J. Appl. Phys. 79, 571 (1990); XXI ICPIG, Sept. 19- 24. 93, Bochum, Germany.Google Scholar
[4] Stephan, U., Kuske, J., Schade, K., Verhandl. DPG VI, 129 (1993).Google Scholar
[5] Stephan, U., Kuske, J., Schade, K., 4. Treffen “Amorphe Halbleiter”, Holzhau, FRG, (1994).Google Scholar