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The intrinsic free carrier mobility in AlGaN/GaN quantum wells

Published online by Cambridge University Press:  01 February 2011

F. Carosella ,
M. Germain  and
J.-L. Farvacque
F. Carosella
Affiliation:
Université des Sciences et Technologies de Lille, CNRS UMR 8008, Bât C6, 59655 Villeneuve d'Ascq Cedex, France
M. Germain
Affiliation:
IMEC, Microsystems, Components and Packaging, Kapeldreef, 75, B-3000 Leuven, Belgium.
J.-L. Farvacque
Affiliation:
Université des Sciences et Technologies de Lille, CNRS UMR 8008, Bât C6, 59655 Villeneuve d'Ascq Cedex, France
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Abstract

The aim of this contribution is to determine theoretically the maximum mobility that can be expected in AlGaN/GaN quantum wells as soon as the free carriers are only submitted to intrinsic scattering mechanisms associated with phonons and the carrier-carrier interaction. In our model, we consider that the carrier-carrier two bodies collisions do not constitute by themselves a relaxation mechanism since they conserve the momentum and the energy of the electron system. Thus, we assume that the free carriers act only through their contribution to the dynamical dielectric response of the material and, at least, through their collective behavior resulting into plasmons which, when damped, constitute now a real relaxation mechanism. The full scattering strength is connected with the imaginary part of the total reversed dielectric function including the lattice and the free carrier contributions. This approach automatically includes the scattering mechanisms associated with hybrid phonon/plasmon particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.6
Copyright
Copyright © Materials Research Society 2005

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References

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