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δ-Nb-doping Effect to The Interface Between IrO2 Top Electrode and Pb(Zr, Ti)O3 by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Osamu Matsuura ,
Hideki Yamawaki ,
Masaki Nakabayashi ,
Yoshimasa Horii  and
Yoshihiro Sugiyama
Osamu Matsuura
Affiliation:
Silicon Technologies Laboratories, Fujitsu Laboratories Limited.
Hideki Yamawaki
Affiliation:
Silicon Technologies Laboratories, Fujitsu Laboratories Limited.
Masaki Nakabayashi
Affiliation:
Product engineering department, FRAM division, Fujitsu Limited 10–1 Morinosato-Wakamiya, Atsugi 243–0197, Japan
Yoshimasa Horii
Affiliation:
Product engineering department, FRAM division, Fujitsu Limited 10–1 Morinosato-Wakamiya, Atsugi 243–0197, Japan
Yoshihiro Sugiyama
Affiliation:
Silicon Technologies Laboratories, Fujitsu Laboratories Limited.
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Abstract

We studied the Nb doping effect on the electrical characteristics of MOCVD-PZT capacitors using uniformly Nb-doped Pb(Zr, Ti)O3 (UND-PZT) and δ-Nb-doped PZT (DND-PZT) prepared by MOCVD. The 2Pr for UND-PZT was small and the UND-PZT hysteresis shifted in a positive direction. However, the 2Pr for DND-PZT decreased by only 5.5% and the hysteresis of DND-PZT didn't shift. In addition, the leakage current of DND-PZT decreased by one order at low bias compared to non-doped PZT, because the δ-Nb-doping layer maintains the barrier height, higher than that of none-doped PZT due to defect compensation. As a result, Nb1% DND-PZT was well suited to use Nb doping which decreases leakage current at low voltage and maintains 2Pr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D2.3
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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