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A Study Of The Composition Uniformity, Electrical And Spectroscopic Properties Of CdZnTe Detectors

Published online by Cambridge University Press:  10 February 2011

M-A. Gagliardi ,
S. Nenonen ,
T. Gagliardi ,
K. T. Hjelt ,
M. Juvonen ,
T. Tuomi  and
M. Bavdaz
M-A. Gagliardi
Affiliation:
Metorex International Oy, Nihtisillankuja 5, FIN-02631 Espoo, Finland.
S. Nenonen
Affiliation:
Metorex International Oy, Nihtisillankuja 5, FIN-02631 Espoo, Finland.
T. Gagliardi
Affiliation:
Metorex International Oy, Nihtisillankuja 5, FIN-02631 Espoo, Finland.
K. T. Hjelt
Affiliation:
Helsinki University of Technology, Otakaari 1, FIN-02150 Espoo, Finland.
M. Juvonen
Affiliation:
Helsinki University of Technology, Otakaari 1, FIN-02150 Espoo, Finland.
T. Tuomi
Affiliation:
Helsinki University of Technology, Otakaari 1, FIN-02150 Espoo, Finland.
M. Bavdaz
Affiliation:
Space Science Department of the European Space Agency, P.O. Box 299, NL-2200AG Noordwiijk, The Netherlands.
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Abstract

The electrical and charge collection properties of a semiconductor detector play an important role in a spectrometer's final performance. However, the studies of these properties often concentrate on only a few samples. In this work over 100 CdZnTe detectors from 12 different growth boules were characterized with one of the following test methods. The composition uniformity was evaluated with low temperature photoluminescence (PL) measurements. From the current-voltage characteristics the differences in CdZnTe detector resistivities were investigated. Charge collection properties, μτ-products, and energy resolutions were characterized with spectroscopic methods using an alpha and isotopic sources. A wide selection of test results are presented indicating the variety of CdZnTe material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 77
Copyright
Copyright © Materials Research Society 1998

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References

[1] Hjelt, K., Juvonen, M., Tuomi, T., Nenonen, S., Eissler, E., Bavdaz, M., Phys. Stat. Sol. (a) 162, 747, 1997.Google Scholar
[2] Toney, J.E., Brunett, B.A., Schelinger, T.E., Scyoc, J.M. Van, James, R.B., Scheber, M., Goorsky, M., Yoon, H., Eissler, E., Johnson, C., Nucl. Instr. Meth. A380, 132 (1996)Google Scholar
[3] Chen, Y. F, Tsai, C. S, Chang, Y.H., Chang, Y.M., Chen, T.K., Pang, Y.M., Appl. Phys. Lett., 58, 493, (1991).Google Scholar
[4] Mgnea, N., Dal'Bo, F., Pautrat, J.L., Million, A., Ciccio, L. Di, Feuillet, G., Mat. Res. Soc. Symp. Proc. vol.90, 455, (1987)Google Scholar
[5] Gonzádlez-Hernández, J., López-Cruz, e., Allred, D.D., Allred, W.P., J. Vac. Sci. Technol. A8 (4), 3255, (1990).Google Scholar
[6] Krustok, J., Mädasson, J., Hjelt, K., Collan, H., J. Mat. Sci. Letters, 14, 1490, (1995).Google Scholar
[7] James, R.B., Schlesinger, T.E., Lund, J., Schieber, M., in Semiconductors for Room Temperature Nuclear Detector Applications, Semiconductors and Semimetals edited by Schlesinger, T.E. and James, R.B., Academic Press inc., 1995.Google Scholar