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Observation of Oxidation-Enhanced and -Retarded Diffusion of Antimony in Silicon: The Behavior of (111) Wafers

Published online by Cambridge University Press:  15 February 2011

T. Y. Tan  and
B. J. Ginsberg
T. Y. Tan
Affiliation:
IBM Thomas J. Watson research Center, Yorktown Heights, New York, 10598
B. J. Ginsberg
Affiliation:
IBM Thomas J. Watson research Center, Yorktown Heights, New York, 10598
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Abstract

An experiment was performed to study the oxidation-enhanced and -retarded diffusion (OED and ORD) of Sb in silicon wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with the prediction of a model assuming that Si self-interstitials (I) and vacancies (V) coexist in thermal equilibrium at high temperatures. An adjustment of the I supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects V into (111) wafers in addition to the normal mechanism of I injection due to SiO2 growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 141
Copyright
Copyright © Materials Research Society 1982

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References

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