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Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

Published online by Cambridge University Press:  15 March 2011

Kangkang Wang ,
Abhijit Chinchore ,
Wenzhi Lin ,
Arthur Smith  and
Kai Sun
Kangkang Wang
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Abhijit Chinchore
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Wenzhi Lin
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Arthur Smith
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Kai Sun
Affiliation:
Department of Materials Sciences and Engineering, University of Michigan, Ann Arbor, MI 48109, U.S.A.
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Abstract

Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are investigated. Results suggest that for growth on wurtzite GaN, Ga-polar surface promotes quicker interface formation, and also results in better crystalline quality of the MnGa film, as compared to N-polar. The crystal orientation and magnetic anisotropy are found to be different than those grown on cubic scandium nitride substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1118: Symposium K – Magnetic Nanostructures by Design , 2008 , 1118-K06-06
Copyright
Copyright © Materials Research Society 2009

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References

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