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Structural Characterization of InAs/(GaIn)Sb Superlattices for IR Optoelectronics

Published online by Cambridge University Press:  10 February 2011

J. Wagner ,
J. Schmitz ,
F. Fuchs ,
U. Weimar ,
N. Herres ,
G. Tränkle  and
P. Koidl
J. Wagner
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
J. Schmitz
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
F. Fuchs
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
U. Weimar
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
N. Herres
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
G. Tränkle
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
P. Koidl
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
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Abstract

We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 39
Copyright
Copyright © Materials Research Society 1996

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