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Properties of Intrinsic a-Si Films Deposited From Higher Order Silanes by Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

Richard E. Rocheleau ,
Steven S. Hegedus  and
Bill N. Baron
Richard E. Rocheleau
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
Steven S. Hegedus
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
Bill N. Baron
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
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Abstract

Amorphous silicon films have been deposited by chemical vapor deposition using disilane at temperatures between 360 and 525°C at growth rates up to 50 A/s. Intrinsic films have the following properties: σp less than 5 × 10−6 (Ω-cm)−l; σd less than 5 × 10−11 (Ω-cm)−1 with Ea = 0.7 to 0.8 eV; diffusion length around 0.1 μm; Urbach energy 48 to 55 meV; and mid-gap density of states greater than 5 × 1016 cm−3 eV−1. Boron compensation improved collection efficiency by lowering the mid-gap density of states, not by improving the μτ product. Pin cells with effíciencies of 4% and Jsc = 10.9 mA/cm2 (87.5 mW ELH) were fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 15
Copyright
Copyright © Materials Research Society 1985

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