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Electromigration in Sputter Deposited Copper/Zirconium Alloys

Published online by Cambridge University Press:  10 February 2011

N. D. McCusker ,
N. D. McCusker  and
B. M. Armstrong
N. D. McCusker
Affiliation:
Dept. of Electrical and Electronic Engineering, Queen's University, Belfast, BT9 5AH, U.K., n.mccusker@ee.qub.ac.uk
N. D. McCusker
Affiliation:
Dept. of Electrical and Electronic Engineering, Queen's University, Belfast, BT9 5AH, U.K., n.mccusker@ee.qub.ac.uk
B. M. Armstrong
Affiliation:
Dept. of Electrical and Electronic Engineering, Queen's University, Belfast, BT9 5AH, U.K., n.mccusker@ee.qub.ac.uk
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Abstract

RF-magnetron sputter deposited copper/zirconium alloy films have been characterised in terms of resistivity, composition, microstructure, texture and stress. The properties and electromigration reliability of these alloys have been compared to those of pure sputtered copper films. The surface segregation of zirconium within the films after annealing has been studied. We have proposed a mechanism in which zirconium at the copper surface can influence the electromigration damage process, enhancing reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 115
Copyright
Copyright © Materials Research Society 1999

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References

1. Ventkatesan, S., et al., Proceedings of the International Electron Devices Meeting, 1997, p. 769.Google Scholar
2. Lloyd, J. R. and Clement, J. J., Thin Solid Films, 262, p. 135 (1995).Google Scholar
3. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1997, p. 62.Google Scholar
4. Hu, C.K. and Luther, B., Materials Chemistry and Physics, 41, p. 1 (1995).Google Scholar
5. Igarashi, Y. and Ito, T., J. Vac. Sci. Technol. B, 16, p. 2745 (1998).Google Scholar
6. McCusker, N.D., Gamble, H.S., Armstrong, B.M., Proceedings of the International Reliability Physics Symposium, 1999, p. 270.Google Scholar
7. Maydas, A. F. and Shatzkes, M., Physical Review B, 1, p. 1382, (1970).Google Scholar
8. Reed-Hill, R.E., Physical Metallurgy Principles, D. Van Nostrand Company, Princeton, New Jersey, 1964, p. 230.Google Scholar
9. Flinn, P. A., J. Mater. Res., 6, p. 1498 (1991).Google Scholar
10. Glickman, E. and Nathan, M., J. Appl. Phys., 80, p. 3782 (1996).Google Scholar
11. Glickman, E. E., Defect and Diffusion Forum, 156, p. 147 (1998).Google Scholar