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Microstructural characterization of GaAs-AlxGa1-xAs core-shell nanowires grown by Au-catalyst assisted MOVPE

Published online by Cambridge University Press:  22 June 2011

D. Altamura ,
I. Miccoli ,
P. Prete ,
N. Lovergine  and
L. Tapfer
D. Altamura
Affiliation:
Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce, Italy ENEA, Unità Tecnica Tecnologia dei Materiali Brindisi (UTTMATB), S.S. 7 “Appia” km 706, I-72100 Brindisi, Italy
I. Miccoli
Affiliation:
Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce, Italy
P. Prete
Affiliation:
Istituto per la Microelettronica e Microsistemi (IMM), CNR, Via Monteroni, I-73100 Lecce, Italy
N. Lovergine
Affiliation:
Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce, Italy
L. Tapfer
Affiliation:
ENEA, Unità Tecnica Tecnologia dei Materiali Brindisi (UTTMATB), S.S. 7 “Appia” km 706, I-72100 Brindisi, Italy
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Abstract

In this work, we report on the microstructural and morphological characterization of III-V semiconductor nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy. As-grown dense (108-109 cm-2) arrays of few-micron long vertically-aligned (i.e. parallel to the <111> crystallographic axis) GaAs, AlxGa1-xAs and core-shell GaAs-AlxGa1-xAs NWs were investigated, carrying out HRXRD measurements on different (hkl) reflections and by recording reciprocal space maps (RSMs) around the materials (111) reciprocal lattice points (relps). We show that NW diffraction peaks are visible in the RSM by means of characteristic halos. In the case of GaAs NWs, the halo is located at the (111) relp indicating that the NWs are grown along the <111> direction and parallel to the <111> axis of the GaAs substrate. On the contrary, for AlxGa1-xAs NWs or intentional core-shell GaAs-AlxGa1-xAs NWs the halo is displaced (along the momentum transfer normal to the surface, Qz) with respect to the GaAs (111) relp due to the elastic lattice strain associated with the compositional variation, e.g. the Al molar fraction in the AlxGa1-xAs alloy, within the nanostructures.

Keywords

nanostructurex-ray diffraction (XRD)crystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee06-01
Copyright
Copyright © Materials Research Society 2011

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References

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