Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T10:27:22.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical Investigation of New Quantum-Cross-Structure Device as a Candidate beyond CMOS

Published online by Cambridge University Press:  01 February 2011

Kenji Kondo ,
Hideo Kaiju  and
Akira Ishibashi
Kenji Kondo
Affiliation:
kkondo@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Nishi-6, Kita-12, Kita-ku, Sapporo, 060-0812, Japan
Hideo Kaiju
Affiliation:
kaiju@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, 060-0812, Japan
Akira Ishibashi
Affiliation:
i-akira@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, 060-0812, Japan
Get access

Abstract

We propose a new quantum cross structure (QCS) device as a candidate beyond CMOS. The QCS consists of two metal nano-ribbons having edge-to-edge configuration like crossed fins. The QCS has potential application in both switching devices and high-density memories by sandwiching a few molecules and atoms. The QCS can also have electrodes with different dimensional electron systems because we can change the widths, the lengths, and the heights of two metal nano-ribbons, respectively. Changing the dimensions of electron systems in both electrodes, we have calculated the current-voltage characteristics depending on the coupling constants between a molecule and the electrode. We find that the conductance peak is much sharper in case of weak coupling regardless of dimensions of electron systems in electrodes, compared to strong coupling case. We also find that the conductance peak of QCS having electrodes with two-dimensional electron systems (2DES) is much sharper than that of QCS having electrodes with three-dimensional electron systems (3DES) in case of strong coupling because of quantum size effect of 2DES. These results imply that the QCS with the very sharp conductance peak can serve as the devices to switch on and off by very small voltage change.

Keywords

devicesnanostructurenanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1067: Symposium B – Materials and Devices for “Beyond CMOS” Scaling , 2008 , 1067-B03-01
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chen, J. Reed, M. A. Rawlett, A. M. and Tour, J. M. Science 286, 1550 (1999).Google Scholar
2.Semiconductor Industry Association, International Technology Roadmap for Semiconductors, 2005 ed.Google Scholar
3. Wu, W. Jung, G.Y. Olynick, D. L. Straznicky, J. Li, Z. Li, X. D. Ohlberg, A. A. Chen, Y. Wang, S.Y. Liddle, J. A. Tong, W. M. Williams, R. S. Appl. Phys. A 80, 1173 (2005).Google Scholar
4. Jung, G. Y. Wu, W. Ganapathiappan, S. Ohlberg, D. A. A., Saifislam, M. Li, X. Olynick, D. L. Lee, H. Chen, Y. Wang, S. Y. Tong, W. M. Williams, R. S. Appl. Phys. A 81, 1331 (2005).Google Scholar
5. Ishibashi, A. Proc. Int. Symp. on Nano Science and Technology, 44 (2004).Google Scholar
6. Kaiju, H. Ono, A. Kawaguchi, N. and Ishibashi, A. Jpn. J. Appl. Phys. 47, 244 (2008).Google Scholar
7. Kondo, K. and Ishibashi, A.: Jpn. J. Appl. Phys. 45, 9137 (2006).Google Scholar
8. Kaiju, H. Kondo, K. and Ishibashi, A.: Mater. Res. Soc. Symp. Proc. 961, O5.5.1 (2007).Google Scholar