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Properties of Al and Pd Contacts on n-type SiC Membranes

Published online by Cambridge University Press:  13 June 2012

N.F. Mohd Nasir ,
P.W. Leech ,
A.S. Holland ,
G.K. Reeves  and
P. Tanner
N.F. Mohd Nasir
Affiliation:
School of Mechatronic Engineering, Universiti Malaysia Perlis, Arau, Perlis, Malaysia RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
P.W. Leech
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
A.S. Holland
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
G.K. Reeves
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, Australia
P. Tanner
Affiliation:
Griffith University, Queensland Microtechnology Facility, Brisbane, Australia
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Abstract

Membranes with dimensions up to 10 mm x 15 mm have been fabricated in epitaxial 3C-SiC/Si wafers. An array of CTLM metal contacts was deposited onto the upper surface of the n-SiC membrane. Both Al/n-SiC and Pd/n-SiC contacts which were formed on the membrane and on the adjacent substrate have shown an ohmic current/ voltage response. Values of specific contact resistance, ρc, were measured directly on the membranes. These results have shown no consistent difference in ρc of the contacts located either on the membrane or off the membrane. The exposure of SiC surfaces to reactive ion etching in CF4 plasma during the fabrication of a membrane has resulted in ρc which was higher by a factor of 103 than with as-grown and KOH etched silicon surfaces.

Keywords

microelectro-mechanical (MEMS)Alchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h04-05
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Cimalla, V., Pezoldt, J. and Ambacher, O., J. Phys.D Applied Phys. 40, 6386 (2007).Google Scholar
2. Zappe, S.F., Design, “Performance and Applications of SiC MEMs”, in SiC Electromechanical Systems for Harsh Environments, Imperial College Press, Ed. Cheung, R. (2006).Google Scholar
3. Reeves, G.K., Solid State Electronics 23, 487 (1980).Google Scholar
4. Barda, B., Machac, P., Hubickova, M. and Nahlik, J., J. Mat. Sci:Mater. Electron. 19, 1039 (2008).Google Scholar
5. Ito, K., Onishi, T., Takeda, H., Kohama, K., Tsukimoto, S., Konno, M., Suzuki, Y. and Murakami, M., Journal of Electronic Materials 37(11) 1647 (2008).Google Scholar
6. Kolaklieva, L. and Kakakov, R. in Microelectronic and Mechanical Systems, Ed Takahata, K., (2009).Google Scholar
7. Wang, L., Dimitrijev, S., Han, J., Iocopi, F. and Zhou, J., Journal of Crystal Growth 311, 4462 (2009).Google Scholar
8. Oehrlein, G.S., Zhang, Y., Vender, D. and Joubert, O., J.Vac.Sci.Technol. A12, 333 (1994).Google Scholar
9. Bazin, A.E., Michaud, J.F., Cayrel, F., Portail, M., Chassagne, T., Zielinski, M., Collard, E. and Alquier, D., AIP Conf Proc 1292 51 (2010).Google Scholar
10. Kalanina, E.V., Kholuyanov, G.F., Shchukarev, A.V., Savkina, N.S., Babanin, A.I., Yagovkina, M.A. and Kaznetsov, N.I., Diamond and Related Materials 8, 1114 (1999).Google Scholar
11. Pai, C.S., Hanson, C.M. and Lau, S.S., J. Appl. Phys. 57, 618 (1985).Google Scholar