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Lattice Relaxation of AlN Buffer on Surface-Treated SiC in Molecular-Beam Epitaxy for Growth of High-Quality GaN

Published online by Cambridge University Press:  11 February 2011

Jun Suda ,
Kouhei Miura ,
Misako Honaga ,
Norio Onojima ,
Yusuke Nishi  and
Hiroyuki Matsunami
Jun Suda
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Kouhei Miura
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Misako Honaga
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Norio Onojima
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Yusuke Nishi
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
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Abstract

The effects of SiC surface treatment on the lattice relaxation of AlN buffer layers and the crystalline quality of GaN layers grown on the buffer layers were studied. AlN buffer layers and GaN main layers were grown by plasma-assisted molecular-beam epitaxy on on-axis 6H-SiC (0001)Si substrates. High-temperature HCl-gas etching resulted in an atomically flat SiC surface with (√3×√3)R30° surface reconstruction, while HCl-gas etching followed by HF chemical treatment resulted in an atomically flat surface with (1×1) structure. The AlN layer grown on the (1×1) surface showed slower lattice relaxation. GaN grown on the AlN buffer layer exhibited a (0002) X-ray rocking curve of 70 arcsec and 107 cm−2 of screw-type dislocation density, which was superior than that of GaN grown on (√3×√3)R30° surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L4.6
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Onojima, N., Suda, J. and Matsunami, H., Appl. Phys. Lett. 80, 76 (2002).Google Scholar
2. Onojima, N., Suda, J. and Matsunami, H., J. Crystal Growth 237–239, 1012 (2002).Google Scholar
3. Nakamura, S., Kimoto, T., Matsunami, H., Tanaka, S., Teraguchi, N. and Suzuki, A., Appl. Phys. Lett. 76, 3412 (2000).Google Scholar
4. Brandt, O., Muralidharan, R., Waltereit, P., Thamm, A., Trampert, A., von Kiedrowski, H. and Ploog, K. H., Appl. Phys. Lett. 75, 4019 (1999).Google Scholar
5. Xie, M. H., Zheng, L. X., Cheung, S. H., Ng, Y. F., Wu, H., Tong, S. Y. and Otani, N., Appl. Phys. Lett. 77, 1105 (2000).Google Scholar
6. Heying, B., Tarsa, E. J., Elsass, C. R., Fini, P., DenBaars, S. P. and Speck, J. S., J. Appl. Phys. 85, 6470 (1999).Google Scholar