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Cavities in He-Implanted Si: “Internal” Surface Science

Published online by Cambridge University Press:  25 February 2011

D. M. Follstaedt ,
S. M. Myers  and
H. J. Stein
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185–5800
S. M. Myers
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185–5800
H. J. Stein
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185–5800
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Abstract

The concept of using internal cavities in semiconductors for surface studies is presented. The microstructures of He-implanted (001) Si are characterized with [110] cross-section TEM, which shows that internal areas 5–7 times that of the specimen front surface are achieved with 1×1017 He/cm2 implanted at 30 keV and annealed at 700 or 800°C. Examples using internal cavities to determine surface bond strengths of other elements adsorbed on Si are indicated. Facets on the cavities are used to examine the equilibrium crystal shape of Si and to measure the ratios of the surface free energies of the observed planes. The {111} planes have the lowest energy, and those of {001} and {110} are 1.09(7) and 1.07(3) times higher, respectively. We also find cavities in He-implanted Ge after annealing that can be used for similar studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 105
Copyright
Copyright © Materials Research Society 1993

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