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A Low Electron Voltage Approach to Increase Spatial Resolution of Temperature Mapping in Thermal Scanning Electron Microscopy

Published online by Cambridge University Press:  15 April 2013

Xiaowei Wu  and
Robert Hull
Xiaowei Wu*
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
Robert Hull
Affiliation:
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, U.S.A.
*
*wux5@rpi.edu
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Abstract

Thermal scanning electron microscopy is a new temperature mapping technique based on thermal diffuse scattering in electron backscatter diffraction in a scanning electron microscope. It provides both nano-scale resolution and far-field non-contact temperature mapping capabilities no other methods can adequately combine. While a calculated spatial resolution of less than 100 nm has already been realized using 20 keV electrons, lower energy incident electrons should enable still higher spatial resolution (even down to 10 nm). In this paper, the feasibility of this approach is examined.

Keywords

electron-phonon interactionsscanning electron microscopy (SEM)nanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1525: Symposium SS – Quantitative In-Situ Electron Microscopy , 2013 , mrsf12-1525-ss06-02
Copyright
Copyright © Materials Research Society 2013

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References

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