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SiGe HBT/BiCMOS Technologies and their Applications to Communication ICs/LSIs

Published online by Cambridge University Press:  17 March 2011

Katsuya Oda ,
Katsuyoshi Washio  and
Takashi Hashimoto
Katsuya Oda
Affiliation:
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
Katsuyoshi Washio
Affiliation:
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
Takashi Hashimoto
Affiliation:
Device Development Center, Hitachi, Ltd., Tokyo, Japan
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Abstract

Self-aligned ultra-high-speed SiGe HBTs were developed by using selective epitaxial growth (SEG) technology. The use of HCl-free SEG, incorporation of C, and optimization of doping profiles significantly improves the performance of the HBT, producing a transistor with a high cutoff frequency of 170 GHz and a maximum oscillation frequency of 204 GHz, for a minimum ECL gate delay time of 4.8 ps. This is applied in a 16:1 MUX with a maximum clock rate of 57 GHz. A 0.13-μm SiGe BiCMOS technology is also realized without any degradation of CMOS due to the high stability of SiGe HBTs. Furthermore, the structure of SiGe HBT is optimized for an emitter scaled down towards 100 nm, mainly through the use of a funnel-shaped emitter electrode to reduce both emitter and base resistances. High-speed operation of a static frequency divider demonstrates the advantage of SiGe HBTs for ultra-high-speed communications systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B6.1
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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