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Modeling Ultra Shallow Junctions Formed by Phosphorus-Carbon and Boron-Carbon Co-implantation

Published online by Cambridge University Press:  21 April 2011

Christoph Zechner ,
Dmitri Matveev ,
Nikolas Zographos ,
Victor Moroz  and
Bartek Pawlak
Christoph Zechner
Affiliation:
Synopsys Switzerland LLC, Affolternstrasse 52, Zurich, CH-8050, Switzerland
Dmitri Matveev
Affiliation:
Synopsys Switzerland LLC, Affolternstrasse 52, Zurich, CH-8050, Switzerland
Nikolas Zographos
Affiliation:
Synopsys Switzerland LLC, Affolternstrasse 52, Zurich, CH-8050, Switzerland
Victor Moroz
Affiliation:
Synopsys, Incorporated, 700 East Middlefield Road, Mountain View, CA, 94043
Bartek Pawlak
Affiliation:
NXP Semiconductors, Kapeldreef 75, Leuven, B-3001, Belgium
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Abstract

A new carbon-interstitial clustering model has been developed. The model has been implemented into the process simulator Sentaurus Process. Model parameters have been calibrated using fundamental marker layer experiments. B diffusion retardation in the C doped layer as well as Sb diffusion enhancement in the region close to a layer with high C concentration are successfully simulated. The calibrated model has been applied to simulations of ultra-shallow junction formation by high dose P-C and B-C co-implantation. It is assumed that, in regions which are amorphized by ion implantation and recrystallized by solid phase epitaxy, C is in the substitutional state right after the recrystallization. In contrast, in non-amorphized regions, C is assumed to be in clusters at the beginning of thermal annealing. A good agreement between simulation and experimental results has been achieved. The dependence of dopant diffusion on implanted C dose and spike annealing temperature has been reproduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-17
Copyright
Copyright © Materials Research Society 2007

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