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Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

Published online by Cambridge University Press:  01 February 2011

M. K. Hudait ,
Y. Lin ,
C. L. Andre ,
P. M. Sinha ,
C. A. Tivarus ,
J. P. Pelz ,
D. M. Wilt  and
S. A. Ringel
M. K. Hudait
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
Y. Lin
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
C. L. Andre
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
P. M. Sinha
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
C. A. Tivarus
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210, USA
J. P. Pelz
Affiliation:
Department of Physics, The Ohio State University, Columbus, OH 43210, USA
D. M. Wilt
Affiliation:
NASA Glenn Research Center, Cleveland, OH 44135, USA
S. A. Ringel
Affiliation:
Department of Electrical Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, OH 43210, USA
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Abstract

Si-doped InAsxP1-x layers with As mole fractions ranging from 0.05 to 0.50 were grown on InAsxP1-x step-graded buffer layers on InP substrates by solid source molecular beam epitaxy. The growth parameters consisted of a P:In flux ratio of 7:1, a growth temperature of ∼ 485°C, a growth rate of 2.2 Å/s, and an As:In flux ratio of 0.37-2.36 for varying As mole fractions. The As mole fraction and the layer relaxation were determined using triple axis x-ray diffraction measurements. Near complete relaxation (>93%) was achieved for all Si-doped InAsxP1-x epilayers. The structural morphology indicated that the InAsxP1-x graded buffer layers were effective in relieving the lattice mismatch strain as evidenced by a well-developed crosshatch morphology and low rms surface roughness. The electron concentration, mobility, and Si donor activation energy for each InAsxP1-x composition were determined using temperature dependent Hall measurements. At a constant electron carrier concentration of %3.5×1016 cm-3, the 300 K carrier mobility increased from 2700 to 4732 cm2/V-sec with increasing As mole fraction from 0.05 to 0.50.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K10.2
Copyright
Copyright © Materials Research Society 2002

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