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Carbon and the Kinetics of Oxygen Precipitation in Silicon

Published online by Cambridge University Press:  15 February 2011

R.F. Pinizzotto  and
S. Marks
R.F. Pinizzotto
Affiliation:
Central Research Laboratories, Texas Instruments IncorporatedP.O. Box 225936, Dallas, TX 75265
S. Marks
Affiliation:
Central Research Laboratories, Texas Instruments IncorporatedP.O. Box 225936, Dallas, TX 75265
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Abstract

Oxygen precipitation in Czochralski silicon has been studied as a function of anneal time, oxygen concentration and carbon concentration using FTIR. It was found that the oxygen supersaturation controls the precipitation kinetics in high oxygen content samples, whereas the carbon concentration is of prime importance in low oxygen content samples. The decrease in sustitutional carbon concentration after nucleation and its subsequent increase with extended growth anneals supports the view that carbon affects precipitate nucleation, but not precipitate growth. The measured oxygen solubility at 1000°C was found to depend on both the initial oxygen concentration and the initial carbon concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 147
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Hu, S.M., and Patrick, W.J., J. Appl. Phys., 46, 1869 (1975).CrossRefGoogle Scholar
2. Hu, S.M., Appl. Phys. letts., 31, 53 (1977).CrossRefGoogle Scholar
3. Craven, R.A., Semiconductor Silicon/1981, edited by Huff, H.R., Kriegler, J., and Takeishi, Y., The Electrochemical Society, Vol. 81–5, 1981, page 254.Google Scholar
4. Kishino, S., Matsushita, Y., Kanomori, M., and Iizuka, T., Jap. J. Appl. Phys., 21, 1 (1982).CrossRefGoogle Scholar
5. Gzsele, U., and Tan, T.Y., Appl. Phys. A, 28, 79 (1982).CrossRefGoogle Scholar
6. Defects in Semiconductors, Proc. Mater. Res. Soc., Vol. 2, North-Holland, 1981.Google Scholar
7. Semiconductor Silicon/1981, The Electrochemical Society, Vol. 81–5, 1981.CrossRefGoogle Scholar
8. Leroueille, J., phys. stat. sol. (a), 67, 177 (1981).CrossRefGoogle Scholar
9. Oehrlein, G.S., Challou, D.J., Jaworowski, A.E., and Corbett, J. W., Phys. Letts., 86A, 117 (1981).CrossRefGoogle Scholar
10. Oehrlein, G.S., Lindstrom, J.L., and Corbett, J.W., Appl. Phys. Letts., 40, 241 (1982).CrossRefGoogle Scholar
11. Chsawa, A., Takizawa, R., Honda, K., Shibatomi, A., and Ohkawa, S., J. Appl. Phys., 53, 5733 (1982).Google Scholar
12. Kolbesen, B.O., and Muhlbauer, A., Sol. St. Elec., 25, 759 (1982).CrossRefGoogle Scholar
13. Currie, L.C., Anal. Chem., 40, 586 (1968).CrossRefGoogle Scholar
14. Kaiser, W., and Keck, P.H., J. Appl. Phys., 28, 882 (1957).CrossRefGoogle Scholar
15. Newnan, R.C., and Willis, J.B., J. Phys. Chem. Sol., 26, 373 (1965).CrossRefGoogle Scholar
16. Weidersich, H., and Katz, J.L., Correleation of Neutron and Charged Particle Damage, National Technical Information Service, Springfield, VA, 1976, page 21.Google Scholar
17 Murr, L.E., Interfacial Phenomena in Metals and Alloys, Addison-Wesley, Reading, MA, 1975.Google Scholar