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Investigation of minute strain in silicon on insulator and strained-silicon/silicon–germanium/silicon-substrate semiconductor materials using a synchrotron radiation X-ray microbeam

Published online by Cambridge University Press:  14 January 2011

J. Matsui ,
Y. Tsusaka ,
H. Takano ,
Y. Kagoshima ,
T. Senda ,
K. Izunome ,
T. Horikawa ,
Y. Urushihara  and
K. Yokoyama
J. Matsui*
Affiliation:
Synchrotron Radiation Nanotechnology Laboratory, Hyogo Science and Technology Association, 3-1-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1205Japan
Y. Tsusaka
Affiliation:
Graduate School of Material Science, University of Hyogo, 3-2-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297Japan
H. Takano
Affiliation:
Graduate School of Material Science, University of Hyogo, 3-2-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297Japan
Y. Kagoshima
Affiliation:
Graduate School of Material Science, University of Hyogo, 3-2-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297Japan
T. Senda
Affiliation:
Covalent Materials Corporation, 6-861-5, Toko, Seiro-cho, Kitakanbara-gun, Niigata, 957-0197Japan
K. Izunome
Affiliation:
Covalent Materials Corporation, 6-861-5, Toko, Seiro-cho, Kitakanbara-gun, Niigata, 957-0197Japan
T. Horikawa
Affiliation:
Graduate School of Material Science, University of Hyogo, 3-2-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1297Japan
Y. Urushihara
Affiliation:
Synchrotron Radiation Nanotechnology Laboratory, Hyogo Science and Technology Association, 3-1-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1205Japan
K. Yokoyama
Affiliation:
Synchrotron Radiation Nanotechnology Laboratory, Hyogo Science and Technology Association, 3-1-1, Kouto, Kamigori-cho, Ako-gun, Hyogo, 678-1205Japan
*
†Email address for correspondence:matsui@hyogosta.jp
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Abstract

Strain in silicon on insulator (SOI) and strained-silicon(s-Si)/silicon–germanium (SiGe)/Si-substrate crystals is analysed by means of synchrotron X-ray microbeam diffraction. It is found that strain features of the s-Si/SiGe/Si crystals are much different from those of SOI crystals from the lattice tilt and lattice parameter distribution points of view. The two-dimensional lattice tilt maps obtained by scanning the synchrotron X-ray microbeam of about 1 μm in size on the sample surface are useful to study local strain distribution in those materials.

Type
Contributed paper
Information
Diamond Light Source Proceedings , Volume 1 , Issue SRMS-7 , October 2010 , e122
Copyright
Copyright © Diamond Light Source Ltd 2011

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References

REFERENCES

Cohen, G. M., Mooney, P. M., Jones, E. C., Chan, K. K., Solomon, P. M. & Wong, H-S. P. 1999 Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction. Appl. Phys. Lett. 75, 787–789, AIP.CrossRefGoogle Scholar
Fitzgerald, E. A., Xie, Y. -H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mill, Y. -J. & Weir, B. E. 1991 Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates. Appl. Phys. Lett. 59, 811–813, AIP.Google Scholar
Fukuda, K., Tomita, N., Hayashi, K., Tsusaka, Y., Kagoshima, Y., Matsui, J. & Ogura, A. 2006 Two-dimensional anisotropic lattice deformation observed in a commercially available strained-Si wafer. Jpn. J. Appl. Phys. 45, 8542–8548, IPAP.CrossRefGoogle Scholar
Senda, T., Izunome, K., Tsusaka, Y., Fukuda, K., Hayashi, K., Abe, M., Takahata, S., Takano, H., Kagoshima, Y. & Matsui, J. 2008 Crystallinity investigation of compositionally graded SiGe layers by synchrotron X-ray cross-sectional diffraction. Jpn. J. Appl. Phys. 47, 6241–6246, IPAP.CrossRefGoogle Scholar
Takeda, S., Yokoyama, K., Tsusaka, Y., Kagoshima, Y., Matsui, J. & Ogura, A. 2006 Crystallinity estimation of thin silicon-on-insulator layers by means of diffractometry using a highly parallel X-ray microbeam. J. Synchrotron Radiat. 13, 373–377, IUCr.Google Scholar