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A Fetish for Gallium Arsenide

Published online by Cambridge University Press:  10 February 2011

Andrew R. Barron
Andrew R. Barron*
Affiliation:
Department of Chemistry and Department of Mechanical Engineering and Materials Science, Rice University, Houston, TX 77005
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Abstract

An overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [(tBu)GaS]4, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulating properties of cubic-GaS make it suitable as a the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 23
Copyright
Copyright © Materials Research Society 1996

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References

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