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Ion irradiation effects in silicon nanowires

Published online by Cambridge University Press:  04 August 2011

K. Nordlund ,
S. Hoilijoki  and
E. Holmstr¨om
K. Nordlund
Affiliation:
Helsinki Institute of Physics and Department of Physics, P.O. Box 43, FI-00014 University of Helsinki, Finland
S. Hoilijoki
Affiliation:
Helsinki Institute of Physics and Department of Physics, P.O. Box 43, FI-00014 University of Helsinki, Finland
E. Holmstr¨om
Affiliation:
Helsinki Institute of Physics and Department of Physics, P.O. Box 43, FI-00014 University of Helsinki, Finland
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Abstract

Ion irradiation effects in nanowires are of increasing interest due to potential applications of the wires as e.g. current-carrying elements in transistors or as efficient light emitters. Although several experiments have already demonstrated such functionalities, very few theoretical studies on the fundamental mechanisms of ion irradiation have been carried out. To shed light on the basic mechanisms of nanowire irradiation, we have simulated 0.03- 10 keV Ar ion irradiation of Si nanowires with a < 111 >-oriented axis and with all side facets being < 112 >. We compare the results with those for Si surfaces and bulk. The results show that the damage production in the nanowire is strongly influenced by surface effects.

Keywords

ion-beam processingnanostructureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii09-01
Copyright
Copyright © Materials Research Society 2011

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References

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