Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-18T15:41:27.692Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of GaN on Lattice-Matched Hafnium Substrates

Published online by Cambridge University Press:  21 February 2011

R. Beresford ,
K.S. Stevens ,
C. Briant ,
R. Bai  and
D.C. Paine
R. Beresford
Affiliation:
Box D, Division of Engineering, Brown University, Providence, RI 02912
K.S. Stevens
Affiliation:
Box D, Division of Engineering, Brown University, Providence, RI 02912
C. Briant
Affiliation:
Box D, Division of Engineering, Brown University, Providence, RI 02912
R. Bai
Affiliation:
Box D, Division of Engineering, Brown University, Providence, RI 02912
D.C. Paine
Affiliation:
Box D, Division of Engineering, Brown University, Providence, RI 02912
Get access

Abstract

A method of producing epitaxial GaN on single-crystal Hf has been developed. The metal substrate is formed by a strain-anneal process yielding macroscopic (5-mm) grain sizes, followed by polishing, chemical etching, and Ar ion sputtering at elevated temperature in ultrahigh vacuum. The growth is conducted by plasma-assisted molecular beam epitaxy using an initial passivation layer deposited at low temperature and subsequent growth at 700 °C. The resulting films are in registry with the hep substrate lattice as observed by reflection high-energy electron diffraction during growth and verified by plan-view transmission electron microscopy. High-resolution x-ray rocking curve linewidths of the GaN and Hf [1012] peaks are as narrow as 900 and 180 arc seconds, respectively. The [0002] peak separation confirms the approximately 2.7% mismatch in the c axis spacing. Initial photo]uminescence observations at 20 K of a (donor-bound exciton) peak at 3.467 eV are consistent with the assumption of a nearly strain-free film resulting from the exact basal-plane lattice match and close thermal coefficient match between GaN and Hf.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 55
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lester, S.D., Ponce, F.A., Craford, M.G., and Steigerwald, D.A., Appl. Phys. Lett. 66, 1249 (1995).Google Scholar
2 Aust, K.T., in The Art and Science of Growing Crystals, edited by Gilman, J.J. (John Wiley and Sons, New York, 1963), p. 452.Google Scholar
3 Laudise, R.A., The Growth of Single Crystals (Prentice-Hall, Englewood Cliffs, 1970), p. 114.Google Scholar
4 Beck, P.A. and Sperry, P.B., J. Appl. Phys. 21, 150 (1959).Google Scholar
5 Churchman, A.T., Nature 171, 706 (1953); Proc. Roy. Soc. 226, 216 (1954).Google Scholar
6 Anderson, E.A., Jillson, D.C., and Dunbar, S.R., Trans. AIME 197, 1191 (1953).Google Scholar
7 Rapperport, E.J., Acta Met. 3, 208 (1955).Google Scholar
8 Langeron, J.P. and Lehr, P., Revue Met. 55,901 (1958).Google Scholar
9 Wright, S.I. and Adams, B.L., Metall. Trans. 23A, 759 (1992).Google Scholar
10 Krieger Lassen, N.C., Juul Jensen, D., and Conradsen, K., Scanning Microscopy 6, 115 (1992).Google Scholar